1.株洲中车时代半导体有限公司,湖南 株洲 412001
2.新型功率半导体器件国家重点实验室,湖南 株洲 412001
周望君(1984—),男,工程师,主要从事功率器件可靠性及失效分析研究工作;E-mail: zhouwj@csrzic.com
扫 描 看 全 文
周望君, 陆金辉, 罗海辉, 等. 汽车IGBT模块功率循环寿命研究[J]. 机车电传动, 2021,(5):183-188.
Wangjun ZHOU, Jinhui LU, Haihui LUO, et al. Study on Power Cycling Lifetime of Automotive IGBT Devices[J]. Electric Drive for Locomotives, 2021,(5):183-188.
周望君, 陆金辉, 罗海辉, 等. 汽车IGBT模块功率循环寿命研究[J]. 机车电传动, 2021,(5):183-188. DOI: 10.13890/j.issn.1000-128x.2021.05.029.
Wangjun ZHOU, Jinhui LU, Haihui LUO, et al. Study on Power Cycling Lifetime of Automotive IGBT Devices[J]. Electric Drive for Locomotives, 2021,(5):183-188. DOI: 10.13890/j.issn.1000-128x.2021.05.029.
针对汽车IGBT模块的主要失效原理和引线键合寿命短板,结合仿真分析进行了功率循环试验设计,结温差Δ,T,j,和流经键合线的电流,I,C,是影响键合点寿命的主要加速因子,中间温度(,T,jm,)是影响键合点寿命的重要因子。传统功率循环寿命试验需采用大量的试验样本,文章采用单根键合引线作为试验独立样本,极大程度地减少了试验所需的样本数,同时通过压降参数,V,CE(sat),的微小变化相对准确地获取到IGBT模块内部键合线的脱落趋势,结合寿命模型和威布尔统计方法,对键合点寿命进行统计分析,最终获得功率循环寿命曲线。利用新的功率循环寿命统计方法可将试验成本和试验周期减少80%。
In order to investigate the power cycling failure mechanisms of bonding wires in automotive power modules, experiments were carried out based on electro-thermal FEM simulation, considering junction temperature variation (Δ,T,j,),bond wires current (,I,C,), and medium temperature (,T,m,) as acceleration factors. Comparing with traditional power cycling test using large amount of samples, single bond wire were tested in this work, which greatly reduced the number of samples needed. The lift-off of bond wires were monitored through the variation of IGBT's ,V,CE(sat), value. The lifetime of power cycling test was extracted by using lifetime model and Weibull distribution.It can reduce the cost and period of experiments to 80% by using the new power cycling statistical method in this paper.
汽车IGBT退化原理引线键合单键合引线样本功率循环寿命仿真
automotive IGBTdegradation mechanismwire bondingsingle bonding wire samplespower cycling lifetimesimulation
J. W. 麦克弗森. 可靠性物理与工程:失效时间模型[M]. 秦飞, 安彤, 朱文辉, 等,译. 北京: 科学出版社, 2013.
MCPHERSON J W. Reliability physics and engineering:time-to-failure modeling[M]. QIN Fei, AN Tong, ZHU Wenhui, et al, translate. Beijing: Science Press, 2013.
OH H, HAN B, MCCLUSKEY P, et al. Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: a review[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2413-2426. DOI: 10.1109/TPEL.2014.2346485http://doi.org/10.1109/TPEL.2014.2346485.
CIAPPA M. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 42(4/5): 653-667. DOI: 10.1016/S0026-2714(02)00042-2http://doi.org/10.1016/S0026-2714(02)00042-2.
ZENG Guang, BORUCKI Ludger, WENZEL Oliver, et al. First results of development of a lifetime model for transfer molded discrete power devices[C]//VDE. PCIM Europe 2018. Nuremberg: VDE, 2018: 706-713.
贺国芳, 许海宝. 可靠性数据的收集与分析[M]. 北京: 国防工业出版社, 1995: 66-70.
HE Guofang, XU Haibao. Collection and analysis of reliability data[M]. Beijing: National Defense Industry Press, 1995: 66-70.
王彦刚, CHAMUND Dinesh, 李世平, 等. 功率 IGBT 模块的寿命预测[J]. 机车电传动, 2013(2): 13-17.
WANG Yangang, CHAMUND Dinesh, LI Shiping, et al. Lifetime prediction of power IGBT module[J]. Electric Drive for Locomotives, 2013(2): 13-17.
European Center for Power Electronics. Qualification of power modules for use in power electronics converter units(PCUs) in motor vehicles: ECPE Guideline AQG 324[S]. Nuremberg: ECPE European Center for Power Electronics, 2021.
0
浏览量
36
下载量
0
CSCD
2
CNKI被引量
关联资源
相关文章
相关作者
相关机构