功率封装钝化层开裂原理分析

陈志文; 胡兴旺; 刘勇; 刘俐; 刘胜

doi:10.13890/j.issn.1000-128x.2021.05.025

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功率封装钝化层开裂原理分析

可靠性与失效分析 | 更新时间：2021-12-13

- 功率封装钝化层开裂原理分析
- Analysis on Crack Mechanism of Passivation Layer in Power Packaging
- 机车电传动 2021年第5期页码：156-160
- 作者机构：
  
  1.武汉大学　工业科学研究院，湖北　武汉　430061
  2.安森美半导体，美国　亚利桑那州　85008
  3.武汉理工大学　材料科学与工程学院，湖北　武汉　430061
- 作者简介：
  
  刘胜（1963—），男，博士，教授，研究方向为工艺力学在微电子、光电子、LED、MEMS、电力电子等领域应用，宽禁带半导体生长在线实时监测科学装置，增材制造集成在线监测科学装置，MEMS/NEMS，LED，系统封装与集成，可靠性等；E-mail: victor_liu63@vip.126.com
- 基金信息：
  
  国家自然科学基金项目(61904127;62004144);广东省基础与应用基础研究基金项目(2021A1515010651);中央高校基本科研业务费专项资金资助项目(202401002;203134004;20212VA100;2021VB006);湖北省自然科学基金项目(2020CFA032);国家重点研发计划项目(2019YFB1704600)
- DOI：10.13890/j.issn.1000-128x.2021.05.025
  中图分类号：
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陈志文, 胡兴旺, 刘勇, 等. 功率封装钝化层开裂原理分析[J]. 机车电传动, 2021,(5):156-160.

Zhiwen CHEN, Xingwang HU, Yong LIU, et al. Analysis on Crack Mechanism of Passivation Layer in Power Packaging[J]. Electric Drive for Locomotives, 2021,(5):156-160.
陈志文, 胡兴旺, 刘勇, 等. 功率封装钝化层开裂原理分析[J]. 机车电传动, 2021,(5):156-160. DOI： 10.13890/j.issn.1000-128x.2021.05.025.

Zhiwen CHEN, Xingwang HU, Yong LIU, et al. Analysis on Crack Mechanism of Passivation Layer in Power Packaging[J]. Electric Drive for Locomotives, 2021,(5):156-160. DOI： 10.13890/j.issn.1000-128x.2021.05.025.

摘要

功率芯片表面的钝化层裂纹严重影响功率器件的可靠性。文章通过典型的D-PAK模块温度循环试验，对钝化膜失效原理进行了深入研究。温度循环试验结果表明，裂纹在靠近边界覆盖有铝膜的钝化层中生长，但是很少出现在铝条中。如果钝化膜中的裂纹始终和制造过程中最先产生的裂纹保持一致，那么器件的寿命将会很长。这要求应力强度因子总是小于钝化膜的韧性，否则裂纹就会在后续的服役周期中生长并扩展；应用Griffith准则可以知道裂纹是否会产生。最后，给出了裂纹萌生周期临界值的估算方法，并绘制了裂纹萌生图作为钝化层的失效准则。文章提出的系统性检测钝化层产生棘轮变形和开裂的方法，可以提高器件的可靠性。

Abstract

Passivation crack on the surface of power chip seriously affects the reliability of power devices. In this paper, the mechanism of passivation layer failure was explored by temperature cycling test on D-PAK module. Temperature cycling tests showed that the cracks developed in the passivation film over the aluminum film close to the boundary, but were rarely observed in stripe. If the cracks in passivation film remains the same as the first cracks in manufacturing processes, there would be a long service life for the device. This requires that the stress intensity factor is always less than the toughness of passivation film. Otherwise, the crack will grow and propagate in the subsequent cycles. Griffith criterion can be used to know whether cracks will occur or not. Finally, the estimation method of the critical value of crack initiation cycle was provided, and the crack initiation diagram was illustrated as the failure criterion of passivation layer. A method was proposed to predict whether the passivation has ratcheting deformation or crack to improve the reliability of devices.

关键词

钝化层开裂棘轮效应功率封装可靠性

Keywords

passivation crackratchet effectpower packagingreliability

references

HUANG M, SUO Z G, MA Q, et al. Thin film cracking and ratcheting caused by temperature cycling[J]. Journal of Materials Research, 2000, 15(6): 1239-1242.

HUANG M, SUO Z G, MA Q. Metal film crawling in interconnect structures caused by cyclic temperatures[J]. Acta Materialia, 2001, 45(15): 3039-3049.

HUANG M, SUO Z G, MA Q. Plastic ratcheting induced cracks in thin film structures[J]. Journal of the Mechanics and Physics of Solids, 2002, 50(5): 1079-1098.

XIA Z C, HUTCHINSON J W. Crack patterns in thin films[J]. Journal of the Mechanics and Physics of Solids, 2000, 48(6/7): 1107-1131.

HUANG R, PRÉVOST J H, SUO Z G. Loss of constraint on fracture in thin film structures due to creep[J]. Acta Materialia, 2002, 50(16): 4137-1448.

LIANG J, HUANG R, PRÉVOST J H, et al. Evolving crack patterns in thin films with the extended finite element method[J]. International Journal of Solids and Structures, 2003, 40(10): 2343-2354.

LIANG J, HUANG R, PRÉVOST J H, et al. Thin film cracking modulated by underlayer creep[J]. Experimental Mechanics, 2003, 43(3): 269-279.

LIANG J, ZHANG Z, PRÉVOST J H, et al. Time-dependent crack behavior in an integrated structure[J]. International Journal of Fracture, 2004, 125(3): 335-348.

SUO Z G, PRÉVOST J H, LIANG J. Kinetics of crack initiation and growth in organic-containing integrated structures[J]. Journal of the Mechanics and Physics of Solids, 2003, 51(11/12): 2169-2190.

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