1.株洲中车时代半导体有限公司,湖南 株洲 412001
2.新型功率半导体器件国家重点实验室,湖南 株洲 412001
石廷昌(1986—),男,工程师,主要从事功率半导体IGBT器件封装设计、产品开发相关工作;E-mai: shitc@csrzic.com
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石廷昌, 李寒, 常桂钦, 等. 银烧结技术在压接型IGBT器件中的应用[J]. 机车电传动, 2021,(5):128-133.
Tingchang SHI, Han LI, Guiqin CHANG, et al. Application of Silver Sintering Technology in Press-pack IGBTs[J]. Electric Drive for Locomotives, 2021,(5):128-133.
石廷昌, 李寒, 常桂钦, 等. 银烧结技术在压接型IGBT器件中的应用[J]. 机车电传动, 2021,(5):128-133. DOI: 10.13890/j.issn.1000-128x.2021.05.020.
Tingchang SHI, Han LI, Guiqin CHANG, et al. Application of Silver Sintering Technology in Press-pack IGBTs[J]. Electric Drive for Locomotives, 2021,(5):128-133. DOI: 10.13890/j.issn.1000-128x.2021.05.020.
银烧结技术具有低温连接、低热阻、低应力和高熔点等特点,已成为保证绝缘栅双极型晶体管(IGBT)界面连接的可靠性应用技术。文章分析了银烧结技术工艺和引入银烧结技术的压接型IGBT器件结构组成;利用有限元方法对比分析了银烧结子单元和焊接子单元封装的2种压接型IGBT器件热阻差异;通过压降参数、压力均匀性、热阻特性和长周期功率循环界面可靠性这4个维度对比了银烧结IGBT器件和常规焊接IGBT器件的特性差异。实际应用证明,引入银烧结技术的压接型IGBT器件,其可靠性得到了大幅度提升。
Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar transistors(IGBT). The mechanism of silver sintering technology, and the structure of press-pack IGBT by silver sintering technology were introduced. Then, the thermal resistance difference between silver sintered sub-units package module and soldering sub-units package module was analyzed and compared by finite element method. Finally, voltage drop parameters, pressure uniformity, thermal resistance characteristics and long period power cycle interface reliability were verified and compared to the press-pack IGBT device by traditional soldering IGBT device.The paratical application shows that the reliability of the press-pack IGBT device with silver sintering technology has greatly improved.
银烧结技术压接型IGBT可靠性有限元方法
silver sintering technologypress-pack IGBTreliabilityFEA (finite element analysis)
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