1.湖南国芯半导体科技有限公司,湖南 株洲 412001
2.湖南省功率半导体创新中心,湖南 株洲 412001
3.武汉恩硕科技有限公司,湖北 武汉 430000
柯攀(1986—),男,硕士,工程师,主要从事功率模块封装技术方面的工作;E-mail: kepan@csrzic.com
扫 描 看 全 文
柯攀, 黄蕾, 杜隆纯, 等. 全银烧结双面散热SiC模块的工艺设计[J]. 机车电传动, 2021,(5):93-98.
Pan KE, Lei HUANG, Longchun DU, et al. Development of Full Ag Sintering Double Side Cooling SiC Power Module[J]. Electric Drive for Locomotives, 2021,(5):93-98.
柯攀, 黄蕾, 杜隆纯, 等. 全银烧结双面散热SiC模块的工艺设计[J]. 机车电传动, 2021,(5):93-98. DOI: 10.13890/j.issn.1000-128x.2021.05.014.
Pan KE, Lei HUANG, Longchun DU, et al. Development of Full Ag Sintering Double Side Cooling SiC Power Module[J]. Electric Drive for Locomotives, 2021,(5):93-98. DOI: 10.13890/j.issn.1000-128x.2021.05.014.
针对SiC芯片高工作结温、高功率密度和低杂散电感的封装技术要求,设计了一款双面散热SiC模块,仿真其杂散电感和均流性能,模块具有较低电感和较好的均流性。开发了全银烧结工艺和工艺流程,并试制了科研样品。通过动静态测试,在漏源极电流,I,d,为350 A和比导通电阻,R,DS-on,为3.95 mΩ下,计算出包含测试电路的总电感,L,s,为11.2 nH,模块具有较好的静动态性能。试验表明,全银烧结双面散热SiC模块具有优良的动静态性能,具有较大的应用前景。
On the package requirements of SiC devices of high operate temperature, high power density and low stray inductance,a double side cooling SiC power module was designed. The simulation results displayed that the power module has good current balance and low stray inductance. To fully explore SiC module capability, a full Ag sintering process and process fl ow was developed.The samples were manufactured. The dynamic and static test displayed that samples haved good static and dynamic characteristic, and under the condition that the ,R,DS-on, was 3.95 mΩ and drain source current ,I,d, was 350 A, the total stray inductance ,L,s, was 11.2 nH. The test shows that the full Ag sintereing double-sided heat dissipation SiC module has excellent dynamic and static performance and has great application prospect.
全银烧结双面散热SiC模块仿真
full Ag sintereingdouble side coolingSiC modulesimulation
GUTH Karsten, OESCHLER N, BÖWER Lars, et al. New assembly and interconnect technologies for power modules[C]//IEEE. 2012 7th International Conference on Integrated Power Electronics Systems (CIPS). Nuremberg: IEEE, 2012.
戴小平, 吴义伯, 赵义敏, 等. 全烧结型SiC功率模块封装设计与研制[J]. 大功率变流技术, 2016(5): 36-40.
DAI Xiaoping, WU Yibo, ZHAO Yimin, et al. Packaging consideration and development for fully sintered SiC power module[J]. High Power Convertor Technology, 2016(5): 36-40.
DING Chao, LIU Heziqi, NGO Khai D T, et al. A double-side cooled SiC MOSFET power module with sintered-silver interposers: I-design, simulation, fabrication, and performance characterization[J]. IEEE Transactions on Power Electronics, 2021, 36(10): 11672-11680. DOI: 10.1109/TPEL.2021.3070326http://doi.org/10.1109/TPEL.2021.3070326.
盛永和, 罗纳德 P 科利诺. 电力电子模块设计与制造[M]. 北京: 机械工业出版社, 2016.
SHENG William W, COLINO Ronald P. Power electronic modules design and manufacture[J]. Beijing: China Machine Press, 2016.
JIANG Guosheng, DIAO Liyong, KUANG Ken. Advanced thermal management materials[M]. New York: Springer, 2013.
曾正. SiC功率器件的封装测试与系统集成[M]. 北京: 科学出版社, 2020.
ZENG Zheng. Packaging, characterization and integration of SiC power devices[M]. Beijing: Science Press, 2020.
SIOW Kim Shyong. Die-attach materials for high temperature applications in microelectronics packaging[M]. Cham: Springer, 2019: 67-105.
0
浏览量
48
下载量
0
CSCD
1
CNKI被引量
关联资源
相关文章
相关作者
相关机构