适用于HVDC的4.5 kV逆阻IGCT性能研究

潘学军; 陈芳林; 孙永伟; 曾宏; 邹平; 陈勇民

doi:10.13890/j.issn.1000-128x.2021.05.007

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适用于HVDC的4.5 kV逆阻IGCT性能研究

芯片设计与制造 | 更新时间：2021-12-13

- 适用于HVDC的4.5 kV逆阻IGCT性能研究
- Study on Characteristics of 4.5 kV Reverse Blocking IGCT for HVDC
- 机车电传动 2021年第5期页码：47-52
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南　株洲　412001
  2.新型功率半导体器件国家重点实验室，湖南　株洲　412001
- 作者简介：
  
  潘学军（1987—）男，工程师，现主要从事大功率半导体器件开发及应用技术研究；E-mail: panxj@csrzic.com
- 基金信息：
  
  国家能源局科技助力经济2020重点专项(2020YFF0426272)
- DOI：10.13890/j.issn.1000-128x.2021.05.007
  中图分类号：
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潘学军, 陈芳林, 孙永伟, 等. 适用于HVDC的4.5 kV逆阻IGCT性能研究[J]. 机车电传动, 2021,(5):47-52.

Xuejun PAN, Fanglin CHEN, Yongwei SUN, et al. Study on Characteristics of 4.5 kV Reverse Blocking IGCT for HVDC[J]. Electric Drive for Locomotives, 2021,(5):47-52.
潘学军, 陈芳林, 孙永伟, 等. 适用于HVDC的4.5 kV逆阻IGCT性能研究[J]. 机车电传动, 2021,(5):47-52. DOI： 10.13890/j.issn.1000-128x.2021.05.007.

Xuejun PAN, Fanglin CHEN, Yongwei SUN, et al. Study on Characteristics of 4.5 kV Reverse Blocking IGCT for HVDC[J]. Electric Drive for Locomotives, 2021,(5):47-52. DOI： 10.13890/j.issn.1000-128x.2021.05.007.

摘要

逆阻型集成门极换流晶闸管(Reverse Blocking Integrated Gate Commutated Thyristor, RB-IGCT)作为一种具备双向耐压与正向可控关断的新型全控型电力电子器件，在电网应用中越来越受到关注。文章分析了高压直流输电(High Voltage Direct Current, HVDC)应用中换相失败的现状、原因及对功率半导体器件的要求，对比了不同器件种类和不同IGCT类型间的特点。针对4.5 kV逆阻IGCT的静态特性、通态特性和开关特性进行了理论与仿真分析。最后通过合成试验验证了逆阻IGCT门极驱动高位取能、黑启动与对HVDC工况的适应性，试验结果表明4.5 kV逆阻IGCT可作为提升HVDC抵御换相失败能力的优选器件之一。

Abstract

As a new fully controlled power electronic device with bidirectional blocking voltage and forward controllable turn off, reverse blocking IGCT has attracted more and more attention in power grid applications. The status,causes of commutation failure in HVDC applications and the requirements for power semiconductor devices were analyzed, and the characteristics of different devices and different IGCT types was compared. At the same time, the static characteristics, on-state characteristics and switching characteristics of 4.5 kV reverse blocking IGCT were analyzed theoretically and simulated. Finally, the gate driver driven high-level energy taking, black start and adaptability to HVDC conditions were verified by synthesis test. The test results showed that 4.5 kV reverse blocking IGCT could be used as one of the preferred devices to enhance the ability of HVDC to resist commutation failure.

关键词

HVDC换相失败逆阻IGCT静态特性开关特性黑启动仿真

Keywords

HVDCcommutation failureRB-IGCTstatic characteristicsswitching characteristicsblack startsimulation

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