碳化硅外延设备技术研究

袁福顺; 邓晓军; 李庆岩; 王石

doi:10.13890/j.issn.1000-128X.2023.05.022

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碳化硅外延设备技术研究

设备技术 | 更新时间：2023-10-12

- 碳化硅外延设备技术研究
- Research on silicon carbide epitaxial equipment technology
- 机车电传动 2023年第5期页码：191-197
- 作者机构：
  
  1.北方华创微电子装备有限公司，北京 100176
- 作者简介：
  
  袁福顺（1983—），男，硕士，主要从事碳化硅外延装备开发及工艺方面的研究；E-mail: yuanfushun@naura.com
- 基金信息：
  
  科技部项目“高性能碳化硅单晶和外延成套装备及其工艺技术研究”
- DOI：10.13890/j.issn.1000-128X.2023.05.022
  中图分类号：
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袁福顺, 邓晓军, 李庆岩, 等. 碳化硅外延设备技术研究[J]. 机车电传动, 2023,(5):191-197.

YUAN Fushun, DENG Xiaojun, LI Qingyan, et al. Research on silicon carbide epitaxial equipment technology[J]. Electric Drive for Locomotives, 2023,(5):191-197.
袁福顺, 邓晓军, 李庆岩, 等. 碳化硅外延设备技术研究[J]. 机车电传动, 2023,(5):191-197. DOI： 10.13890/j.issn.1000-128X.2023.05.022.

YUAN Fushun, DENG Xiaojun, LI Qingyan, et al. Research on silicon carbide epitaxial equipment technology[J]. Electric Drive for Locomotives, 2023,(5):191-197. DOI： 10.13890/j.issn.1000-128X.2023.05.022.

摘要

碳化硅外延技术是采用化学气相沉积设备在N型4H-SiC衬底上进行同质外延生长，而外延生长设备所具有的温度场和气流场的状态决定了外延生长的成膜质量。文章以水平热壁技术路线为例，通过对反应腔室的温度场和气流场进行研究，获得最优的反应腔室结构；并通过对外延工艺的研究，获得优异的工艺控制效果；实现外延生长速度大于60 μm/h，不同外延膜厚均匀性小于1.2%，不同掺杂浓度均匀性小于3%，缺陷密度小于0.2 ea/cm,2,，外延层表面方均根粗糙度小于0.15 nm，并且实现连续30炉次外延工艺控制的结果稳定。

Abstract

Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal hot-wall technology route was taken as an example. Through the study of the temperature field and the airflow field of the reaction chamber, the optimal reaction chamber structure was obtained, and through the study of the epitaxial process, the excellent process results were obtained. The epitaxial growth rate was more than 60 μm/h, the uniformity of different epitaxial film thicknesses was less than 1.2%, the uniformity of different doping concentrations was less than 3%, the defect density was less than 0.2 ea/cm,2, and the root-mean-square roughness of the epitaxial layer surface was less than 0.15 nm. Meanwhile, stable results of 30 consecutive epitaxial process controls were achieved.

关键词

碳化硅外延设备温场气流场

Keywords

silicon carbideepitaxial equipmenttemperature fieldair-flow field

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