基于导通饱和压降的IGBT器件结温在线提取方法
An online extraction method of junction temperature in IGBT devices with saturation voltage drop
- 机车电传动 2023年第5期 页码：170-176
- 作者机构：
1.西南交通大学 电气工程学院，四川 成都 611756
- 作者简介：
宋文胜（1985‒），男，工学博士，教授，博士生导师，主要从事电力电子交流传动控制方面的研究；E-mail: songwsh@swjtu.edu.cn
- 基金信息：国家级学生科研训练计划项目(202210613032)
DOI：10.13890/j.issn.1000-128X.2023.05.019
中图分类号：
扫 描 看 全 文
王泽群, 田小宇, 宋致儒, 等. 基于导通饱和压降的IGBT器件结温在线提取方法[J]. 机车电传动, 2023,(5):170-176.
WANG Zequn, TIAN Xiaoyu, SONG Zhiru, et al. An online extraction method of junction temperature in IGBT devices with saturation voltage drop[J]. Electric Drive for Locomotives, 2023,(5):170-176.
王泽群, 田小宇, 宋致儒, 等. 基于导通饱和压降的IGBT器件结温在线提取方法[J]. 机车电传动, 2023,(5):170-176. DOI： 10.13890/j.issn.1000-128X.2023.05.019.
WANG Zequn, TIAN Xiaoyu, SONG Zhiru, et al. An online extraction method of junction temperature in IGBT devices with saturation voltage drop[J]. Electric Drive for Locomotives, 2023,(5):170-176. DOI： 10.13890/j.issn.1000-128X.2023.05.019.
摘要
绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor, IGBT）模块的结温与工作性能、寿命及其可靠性密切相关，实现IGBT结温在线监测对电力电子系统可靠性提升与服役寿命的延长有着重要意义。文章基于IGBT的导通压降，分别构建了小电流和大电流饱和压降法结温监测模型和测量电路，实现IGBT结温的精确在线监测。首先，结合IGBT的工作原理，推导了导通压降的表达式；然后，根据小电流和大电流饱和压降的特点，分别建立了其结温监测模型；最后，设计了小电流恒流源电路和导通压降采样电路，并进行试验验证。试验结果表明：小电流饱和压降与IGBT结温呈线性关系，大电流饱和压降与结温呈非线性关系，并且二者实现结温监测的误差分别为1.29%和4.91%。
Abstract
The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems. Based on the conduction voltage drop of IGBT, this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature. Firstly, combined the operating principle of IGBT, the paper derived the expression for the conduction voltage drop. Then, according to the characteristics of low-current and high-current saturation voltage drop, the junction temperature monitoring models was established. Finally, it designed a low-current constant current source circuit and a conduction voltage drop sampling circuit, and conducted experiments to verify the models. The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature, while the high-current saturation voltage drop is nonlinearly related. The measurement errors for both methods are 1.29% and 4.91% respectively.
关键词
IGBT模块导通压降结温测量小电流下的饱和压降法大电流下的饱和压降法
Keywords
IGBT moduleconduction voltage dropjunction temperature measurementlow-current saturation voltage drop methodhigh-current saturation voltage drop method
references
周雒维, 吴军科, 杜雄, 等. 功率变流器的可靠性研究现状及展望[J]. 电源学报, 2013, 11(1): 1-15.
ZHOU Luowei, WU Junke, DU Xiong, et al. Status and outlook of power converter's reliability research[J]. Journal of power supply, 2013, 11(1): 1-15.
陈杰, 邓二平, 赵雨山, 等. 高压大功率器件结温在线测量方法综述[J]. 中国电机工程学报, 2019, 39(22): 6677-6687.
CHEN Jie, DENG Erping, ZHAO Yushan, et al. Review of on-line junction temperature measurement methods of high voltage power electronics[J]. Proceedings of the CSEE, 2019, 39(22): 6677-6687.
AICHINGER T， RESCHER G，POBEGEN G. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs[J]. Microelectronics reliability, 2018, 80: 68-78.
杨舒萌, 孙鹏菊, 杜雄, 等. 基于组合短路电流的不受老化影响的IGBT模块结温测量方法[J]. 中国电机工程学报, 2020, 40(18): 5770-5778.
YANG Shumeng, SUN Pengju, DU Xiong, et al. Junction temperature measurement of IGBT based on combined short-circuit current that not affected by aging effect[J]. Proceedings of the CSEE, 2020, 40(18): 5770-5778.
VEMULAPATI U R, BIANDA E, TORRESIN D, et al. A method to extract the accurate junction temperature of an IGCT during conduction using gate-cathode voltage[J]. IEEE transactions on power electronics, 2016, 31(8): 5900-5905.
BARLINI D, CIAPPA M, MERMET-GUYENNET M, et al. Measurement of the transient junction temperature in MOSFET devices under operating conditions[J]. Microelectronics reliability, 2007, 47(9/10/11): 1707-1712.
杨旭, 葛兴来, 柴育恒, 等. 一种基于反向串联稳压二极管钳位的IGBT导通压降在线监测电路[J]. 中国电机工程学报, 2022, 42(12): 4547-4561.
YANG Xu, GE Xinglai, CHAI Yuheng, et al. An online monitoring circuit for IGBT conduction voltage drop based on reverse series zener diodes clamping[J]. Proceedings of the CSEE, 2022, 42(12): 4547-4561.
YANG Y, ZHANG P. In situ junction temperature monitoring and bond wire detecting method based on IGBT and FWD on-state voltage drops[J]. IEEE transactions on industry applications, 2022, 58(1): 576-587.
AVENAS Y, DUPONT L, KHATIR Z. Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters-a review[J]. IEEE transactions on power electronics, 2012, 27(6): 3081-3092.
SMET V, FOREST F, HUSELSTEIN J, et al. Ageing and failure modes of IGBT modules in high-temperature power cycling[J]. IEEE transactions on industrial electronics, 2011, 58(10): 4931-4941.
赵蕤, 杨柯欣, 唐涛, 等.基于一种新型导通压降采样电路的IGBT器件结温在线监测方法[J/OL]. 电源学报: 1-14. (2022-04-27) [2023-01-22]. http://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.htmlhttp://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.html.
ZHAO Rui, YANG Kexin, TANG Tao, et al. Online monitoring method of IGBT device junction temperature based on a novel on-state voltage drop sampling circuit[J/OL]. Journal of power supply: 1-14. (2022-04-27) [2023-01-22]. http://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.htmlhttp://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.html.
0
浏览量
7
下载量
0
CSCD
0
CNKI被引量
- 网络PDF下载
- WORD下载
- Meta-XML下载
- BibTeX下载
- Endnote下载
- RefMan 下载
- NoteExpress下载
- NoteFirst下载
关联资源
相关文章
相关作者
相关机构
- 技术支持由北京北大方正电子有限公司提供 湘ICP备20010475号-1
京公网安备11010802024621 - 本系统建议在Chrome、 IE9+ 以上版本浏览器阅读本站内容，360浏览器请切换至极速模式
- Cookies帮助我们提供服务并提供个性化体验。使用本网站，即表示您同意我们使用Cookies