热界面材料层空洞对有无基板IGBT模块芯片结温影响对比研究
Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate
- 机车电传动 2023年第5期 页码：113-118
- 作者机构：
1.西南交通大学 电气工程学院，四川 成都 610031
2.株洲中车时代电气股份有限公司，湖南 株洲;412001
- 作者简介：
何 凯（1988—），男，博士，高级工程师，主要从事电力电子热管理技术研究；E-mail: hekai1@csrzic.com
- 基金信息：四川省区域创新合作项目(2021YFQ0051)
DOI：10.13890/j.issn.1000-128X.2023.05.012
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胡雅丽, 何凯, 葛兴来. 热界面材料层空洞对有无基板IGBT模块芯片结温影响对比研究[J]. 机车电传动, 2023,(5):113-118.
HU Yali, HE Kai, GE Xinglai. Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate[J]. Electric Drive for Locomotives, 2023,(5):113-118.
胡雅丽, 何凯, 葛兴来. 热界面材料层空洞对有无基板IGBT模块芯片结温影响对比研究[J]. 机车电传动, 2023,(5):113-118. DOI： 10.13890/j.issn.1000-128X.2023.05.012.
HU Yali, HE Kai, GE Xinglai. Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate[J]. Electric Drive for Locomotives, 2023,(5):113-118. DOI： 10.13890/j.issn.1000-128X.2023.05.012.
摘要
新兴的无基板模块广泛应用于新能源领域，其对热界面材料的涂敷要求较高，但相关的研究目前较少。文章针对热界面材料（Thermal Interface Material，TIM）层空洞率不同时，对有、无基板IGBT模块上的芯片结温变化规律进行了仿真研究。通过建立精确数值模型进行稳态热仿真试验，根据试验结果定量分析有、无基板模块上的芯片结温受TIM空洞影响程度。结果表明，相比无基板模块，有基板模块上的芯片结温低，试验芯片分别低8.578 K和9.544 K左右；在TIM层空洞率上升时，对于结温升高速率，无基板模块比有基板模块大，无基板模块的大芯片和小芯片的升温速率分别约为对应的有基板模块大、小芯片的32.190倍和240.875倍；大芯片结温上升速率均比小芯片低，对于有、无基板的模块而言，前者分别约为后者的23倍和3倍。无基板模块对TIM层状态更敏感，要求更高。
Abstract
The emerging modules without baseplate are widely used in the field of new energy. They have high requirements for the coating of thermal interface material, but there are few related studies. In this paper, simulation research was conducted for the changing rule of the junction temperature of chips on IGBT modules with and without baseplate when the void ratio of the thermal interface material (TIM) is changing. A precise numerical model was established to carry out steady-state thermal simulation experiment. According to the results, quantitative analysis was conducted on the degree to which the chip junction temperature is affected by TIM voids on modules with and without baseplate. The results show that the chip junction temperature of the module with baseplate is lower than that of the module without baseplate, and the chip junction temperature is about 8.578 K and 9.544 K lower, respectively. When the void ratio of TIM layer increases, the junction temperature rise rate of the module without baseplate is greater than that of the module with baseplate, and the temperature rise rate of the large chip and the small chip of the module without baseplate is about 32.190 times and 240.875 times respectively that of the module with baseplate. The junction temperature rise rate of large chip is lower than that of small chip, which is about 23 times and 3 times, on modules with baseplate and without baseplate respectively. Modules without baseplate are more sensitive to the state of the TIM layer and have higher requirements.
关键词
无基板功率器件有限元稳态热仿真热界面材料空洞率结温
Keywords
power device without baseplatefinite elementsteady-state thermal simulationthermal interface materialvoid ratiojunction temperature
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