SiC芯片微型化及发展趋势

张园览; 张清纯

doi:10.13890/j.issn.1000-128X.2023.05.005

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SiC芯片微型化及发展趋势

芯片技术 | 更新时间：2023-10-12

- SiC芯片微型化及发展趋势
- Review on miniaturization and development trends of SiC devices
- 机车电传动 2023年第5期页码：46-62
- 作者机构：
  
  1.复旦大学工程与应用技术研究院，上海 200433
  2.复旦大学宁波研究院，浙江宁波;315336
- 作者简介：
  
  张清纯（1969—），男，博士，教授，硕士/博士生导师，主要从事宽禁带半导体方面的研究；E-mail: qingchun_zhang@fudan.edu.cn
- 基金信息：
  
  国家自然科学基金项目(62150710546)
- DOI：10.13890/j.issn.1000-128X.2023.05.005
  中图分类号：
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张园览, 张清纯. SiC芯片微型化及发展趋势[J]. 机车电传动, 2023,(5):46-62.

ZHANG Yuanlan, ZHANG Qingchun. Review on miniaturization and development trends of SiC devices[J]. Electric Drive for Locomotives, 2023,(5):46-62.
张园览, 张清纯. SiC芯片微型化及发展趋势[J]. 机车电传动, 2023,(5):46-62. DOI： 10.13890/j.issn.1000-128X.2023.05.005.

ZHANG Yuanlan, ZHANG Qingchun. Review on miniaturization and development trends of SiC devices[J]. Electric Drive for Locomotives, 2023,(5):46-62. DOI： 10.13890/j.issn.1000-128X.2023.05.005.

摘要

新能源汽车与光伏作为SiC器件发展的重要推手，促进国内碳化硅产业链日趋完善，设计和制造进展快速，部分制造商器件特性已达到或接近国际领先水平。然而，由于SiC器件价格偏高，器件成本成为限制SiC器件进一步渗透市场的最主要因素。SiC芯片微型化能够显著降低芯片成本，已成为进一步加快SiC技术在新能源领域的大规模应用的有效途径之一。文章对近年来SiC芯片微型化的发展进行了梳理总结，对芯片微型化的必要性进行了分析，并提出了SiC芯片微型化的解决办法，阐述了国际SiC芯片微型化进展，对国内SiC技术近阶段的快速发展进行了阶段性总结，并揭示了芯片微型化将面临的各种挑战。最后，对国内SiC器件发展的机遇和未来进行了展望，为进一步研发提供思路和参考。

Abstract

Electrical vehicles and photovoltaic applications played important roles in the development of SiC devices, and promoted the improvement of the SiC industry chain in China. The design and manufacturing are developing rapidly, and the device performance of several domestic manufacturers has reached or approached the international leading level of SiC commercial products. However, the high price of SiC based devices still limits their further penetration into the power market. The miniaturization of SiC chips can significantly reduce the chip cost and has become one of the effective ways to further accelerate the large-scale application of SiC technologies in the power field. The necessity of SiC device miniaturization was analyzed, feasible solutions were proposed, and the rapid progress of SiC technologies was summarized. The major challenges for SiC device miniaturization were revealed, and the prospective development opportunities and future of SiC devices were described to provide a reference for further development of SiC power technologies.

关键词

碳化硅宽禁带半导体功率器件微型化金属-氧化物-半导体场效应晶体管

Keywords

silicon carbide (SiC)wide-bandgap semiconductorpower devicesminiaturizationmetal-oxide-semiconductor field effect transistor (MOSFET)

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