双碳目标下的三族氮化物功率半导体技术

罗卓然; 何亮; 张津玮; 刘扬

doi:10.13890/j.issn.1000-128X.2023.05.003

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双碳目标下的三族氮化物功率半导体技术

综述 | 更新时间：2023-10-12

- 双碳目标下的三族氮化物功率半导体技术
- III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
- 机车电传动 2023年第5期页码：26-35
- 作者机构：
  
  1.中山大学电子与信息工程学院，广东广州 510006
  2.工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家级重点实验室，广东广州 511370
- 作者简介：
  
  刘扬（1969—），男，博士，教授，博士生导师，主要从事宽禁带半导体材料与器件方面的研究；E-mail: liuy69@mail.sysu.edu.cn
- 基金信息：
  
  国家重点研发计划项目(2022YFB3604200;2017YFB0402800);广东省重点领域研发计划项目(2020B010174003);广州市基础与应用基础研究项目(202201010923);国家自然科学基金项目(51177175);国家自然科学基金联合基金项目(U1601210);广东省
- DOI：10.13890/j.issn.1000-128X.2023.05.003
  中图分类号：
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罗卓然, 何亮, 张津玮, 等. 双碳目标下的三族氮化物功率半导体技术[J]. 机车电传动, 2023,(5):26-35.

LUO Zhuoran, HE Liang, ZHANG Jinwei, et al. III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals[J]. Electric Drive for Locomotives, 2023,(5):26-35.
罗卓然, 何亮, 张津玮, 等. 双碳目标下的三族氮化物功率半导体技术[J]. 机车电传动, 2023,(5):26-35. DOI： 10.13890/j.issn.1000-128X.2023.05.003.

LUO Zhuoran, HE Liang, ZHANG Jinwei, et al. III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals[J]. Electric Drive for Locomotives, 2023,(5):26-35. DOI： 10.13890/j.issn.1000-128X.2023.05.003.

摘要

能源生产清洁化和能源消费电气化是我国“双碳”政策的必经之路，功率半导体技术在这2个过程中发挥着重要作用。以氮化镓（GaN）为代表的三族氮化物功率半导体基于其优异的材料物理特性，未来应用前景广阔。历经二十余年产业链上下游技术发展，目前GaN功率半导体的关键共性技术，诸如大尺寸Si衬底上高耐压GaN材料外延、稳定常关型器件的制备以及与CMOS兼容的GaN工艺制备等，已逐步得到解决，产品在消费类电子领域实现了量产应用，但是GaN功率器件仍然面临着“用不起”“用不好”“不敢用”的问题，这限制了其应用领域的拓展。未来GaN功率半导体器件将向着更高功率密度与更高可靠性方向发展，伴随着大功率发展趋势，常开型器件与常关型器件2条技术路线相互竞争，并向着高频化趋势下的功率集成技术、低成本大功率纵向器件技术等方向进一步发展，在车载等更多更高端领域实现规模化应用。文章主要介绍了三族氮化物功率半导体技术发展现状和Si衬底GaN基功率器件的关键共性技术，以及分析目前GaN功率器件的应用瓶颈与未来的发展趋势。

Abstract

Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes. III-nitride semiconductor, particularly gallium nitride (GaN), has a wide range of applications because of its excellent physical characteristics. In the past 20 years, with the development of the industry, some common key technological issues of GaN-based devices were resolved, such as large size and high breakdown voltage GaN epitaxy, preparation of stable normally-off devices and CMOS compatible preparation technology. GaN power devices have so far been applied in consumer electronics, but there are still many limitations to further applications like cost, compatibility and reliability. In the future, GaN power devices will develop towards higher power density and reliability, develop in normally-off devices and normally-on devices, and realize power integration in high frequency and low-cost vertical devices. As the technology advances, GaN power devices will be applied at more high-end field of vehicle. This paper mainly introduces the development of III-nitride semiconductor and key generic technological issues of GaN power semiconductor devices fabricated on Si substrates, and analyze the current application bottleneck and future development trend of GaN power devices.

关键词

双碳三族氮化物GaN功率半导体

Keywords

carbon peaking and carbon neutralityIII-nitrideGaNpower semiconductor

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