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宁波市轨道交通集团有限公司,浙江 宁波 315000
凌 人(1982—),男,硕士,高级工程师,研究方向为轨道交通机电设备;E-mail: lingren1982@163.com
纸质出版日期:2023-03-10,
收稿日期:2023-01-17,
修回日期:2023-02-27,
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凌人. 高热流密度SiC功率模块传热优化设计研究[J]. 机车电传动, 2023(2): 59-64.
LING Ren. Research on heat transfer optimization design for high heat flux SiC power modules[J]. Electric Drive for Locomotives,2023(2): 59-64.
凌人. 高热流密度SiC功率模块传热优化设计研究[J]. 机车电传动, 2023(2): 59-64. DOI: 10.13890/j.issn.1000-128X.2023.02.006.
LING Ren. Research on heat transfer optimization design for high heat flux SiC power modules[J]. Electric Drive for Locomotives,2023(2): 59-64. DOI: 10.13890/j.issn.1000-128X.2023.02.006.
针对新一代高压封装SiC器件功率模块功率密度更大、芯片尺寸更小的问题,文章基于一种新型复合相变散热技术,应用数值仿真和试验测试的研究方法进行传热优化设计研究。将优化设计所得的结果与外形尺寸一致的常规型材翅片散热方案进行性能对比,对比结果表明:在功率3×630 W的工况下,新型复合相变散热器相对型材翅片散热器,在相同风速条件下,温升可减小23.9~32.5 K,降幅为39.7%~61.6%;在相同风冷系统条件下,温升降幅可达到52%,并且对于相同的散热器设计温升,单个IGBT应用功率可增大约860 W,增幅约1倍,对于大功率、高热流密度散热应用发展前景广阔。
Aiming at the new generation of high-voltage packaged SiC device modules with smaller chip size and higher power density
this paper applied the research methods of numerical simulation and test
and studied heat transfer optimization design based on an new composite phase change cooling technology. The results of the optimized design were compared with the conventional profile fin cooling scheme with the same dimensions. The results of comparison show that the temperature rise of the new composite phase change radiator can be reduced by 23.9-32.5 K (39.7%-61.6%) compared with that of the profile fin radiator at the same wind speed with the power of 3×630 W. Under the conditions of the same air cooling system
the range of temperature rise can be reduced by 52%. Under the condition of the same design temperature rise of the radiator
the application power of a single IGBT can increase by about 860 W
or doubling the original power. It has a broad development prospect for the application of high power and high heat flux heat dissipation.
新型复合相变散热器热管理数值仿真SiC器件
new composite phase change radiatorthermal managementnumerical simulationSiC device
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