SiC MOSFET模块串扰问题及应用对策研究

刘敏安; 罗海辉; 卢圣文; 王旭; 李诚

doi:10.13890/j.issn.1000-128X.2023.02.003

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SiC MOSFET模块串扰问题及应用对策研究

大功率器件 | 更新时间：2024-08-02

- SiC MOSFET模块串扰问题及应用对策研究
- Research on crosstalk problem of SiC MOSFET module and countermeasures in application
- 机车电传动 2023年第2期页码：36-42
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南株洲　　412001
  2.功率半导体与集成技术全国重点实验室，湖南株洲;412001
- 作者简介：
  
  刘敏安（1983—），男，硕士，高级工程师，研究方向为功率半导体器件测试技术、应用技术；E-mail: 125819274@qq.com
- 基金信息：
  
  国家重点研发计划项目(2022YFB3604103)
- DOI：10.13890/j.issn.1000-128X.2023.02.003
  中图分类号： TN386.1
- 纸质出版日期：2023-03-10，
  
  收稿日期：2022-10-16，
  
  修回日期：2023-02-16，
- 稿件说明：
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刘敏安, 罗海辉, 卢圣文, 等. SiC MOSFET模块串扰问题及应用对策研究[J]. 机车电传动, 2023(2): 36-42.

LIU Min'an, LUO Haihui, LU Shengwen, et al. Research on crosstalk problem of SiC MOSFET module and countermeasures in application[J]. Electric Drive for Locomotives,2023(2): 36-42.
刘敏安, 罗海辉, 卢圣文, 等. SiC MOSFET模块串扰问题及应用对策研究[J]. 机车电传动, 2023(2): 36-42. DOI： 10.13890/j.issn.1000-128X.2023.02.003.

LIU Min'an, LUO Haihui, LU Shengwen, et al. Research on crosstalk problem of SiC MOSFET module and countermeasures in application[J]. Electric Drive for Locomotives,2023(2): 36-42. DOI： 10.13890/j.issn.1000-128X.2023.02.003.

摘要

针对SiC MOSFET模块应用过程中出现的串扰问题，文章首先对3种测量差分探头的参数和测量波形进行对比，有效减小测量误差；然后详细分析串扰引起模块栅源极出现电压正向抬升和负向峰值过大的原因，并提出3种有效应用对策：减小栅极阻抗、采用有源米勒箝位和三级关断串扰抑制电路。其中，减小栅极阻抗可减小感应压降，抑制栅源极过压；有源米勒箝位技术使栅源极电压串扰波形幅值限制在箝位电压范围；利用三级关断串扰抑制电路技术，显著抑制了栅源极电压的正向抬升和负向峰值，最后通过试验仿真验证了3种方法的有效性。

Abstract

In view of the crosstalk problem in the application of SiC MOSFET module

this paper first conducted a comparison of the parameters and measured waveform of three types of measuring differential probes to effectively reduce measurement error. Then

the reasons why crosstalk causes excessive forward voltage and excessive negative voltage at the gate and source were analyzed in detail

and three effective countermeasures in application were provided

including reducing gate impedance

using active Miller clamping and three-level turn-off crosstalk suppression circuit. Reducing the gate impedance could suppress the amplitude of gate voltage and reduce induced voltage drop. By using active Miller clamping technology

the amplitude of the gate source voltage crosstalk waveform was limited to the clamping voltage range. By utilizing three-level turn-off crosstalk suppression circuit technology

the forward uplift and negative peak of gate source voltage was suppressed significantly. The effectiveness of the three methods was proved by experiment and simulation.

关键词

串扰问题栅源极电压栅极阻抗有源米勒箝位三级关断电平驱动技术

Keywords

crosstalk problemvoltage at the gate and sourcegate impedanceactive Miller clampingthree-stage off level driving technology

references

刘可安, 李诚瞻, 李彦涌, 等. SiC器件技术特点及其在轨道交通中的应用[J]. 大功率变流技术, 2016(5): 13-17.

LIU Kean, LI Chengzhan, LI Yanyong, et al. Characteristics of SiC device and its application in railway traction[J]. High Power Converter Technology, 2016(5): 13-17.

王学梅. 宽禁带碳化硅功率器件在电动汽车中的研究与应用[J]. 中国电机工程学报, 2014, 34(3): 371-379.

WANG Xuemei. Researches and applications of wide bandgap SiC power devices in electric vehicles[J]. Proceedings of the CSEE, 2014, 34(3): 371-379.

盛况, 郭清, 于坤山, 等. 中低压碳化硅材料、器件及其在电动汽车充电设备中的应用示范[J]. 浙江大学学报(理学版), 2016, 43(6): 631-634.

SHENG Kuang, GUO Qing, YU Kunshan, et al. Medium and low voltage SiC materials, power devices and demonstration in electric vehicle charging equipment[J]. Journal of Zhejiang University (Science Edition), 2016, 43(6): 631-634.

蓝桂星. 基于SiC MOSFET的高频LLC充电器研究[D]. 杭州: 浙江大学, 2017.

LAN Guixing. Research on high frequency LLC charger with SiC MOSFET[D]. Hangzhou: Zhejiang University, 2017.

谢敬仁, 洪小聪, 黄树焜, 等. SiC功率器件在并网光伏逆变器中的应用研究[J]. 大功率变流技术, 2016(5): 31-35.

XIE Jingren, HONG Xiaocong, HUANG Shukun, et al. Application of SiC device in grid-connected photovoltaic inverter[J]. High Power Converter Technology, 2016(5): 31-35.

曾正, 邵伟华, 胡博容, 等. SiC器件在光伏逆变器中的应用与挑战[J]. 中国电机工程学报, 2017, 37(1): 221-232.

ZENG Zheng, SHAO Weihua, HU Borong, et al. Chances and challenges of photovoltaic inverters with silicon carbide devices[J]. Proceedings of the CSEE, 2017, 37(1): 221-232.

黄晓波, 陈敏, 朱楠, 等. 基于碳化硅器件的双馈风电变流器效率分析[J]. 电力电子技术, 2014, 48(11): 45-47.

HUANG Xiaobo, CHEN Min, ZHU Nan, et al. Analysis of efficiency of SiC power electronics for doubly-fed wind power converter[J]. Power Electronics, 2014, 48(11): 45-47.

林翔, 李金元, 谢立军, 等. 1 200 V碳化硅MOSFET在智能电网电力电子设备中的应用特性研究[J]. 智能电网, 2016, 4(7): 639-643.

LIN Xiang, LI Jingyuan, XIE Lijun, et al. Research on application characteristics of 1200V SiC MOSFET in power electronic equipments for smart grid[J]. Smart Grid, 2016, 4(7): 639-643.

杨东博. 碳化硅MOSFET器件动态参数测量及其影响因素的研究[D]. 保定: 华北电力大学, 2015.

YANG Dongbo. Research on measurement and influencing factors of SiC MOSFET's dynamic characteristics[D]. Bao-ding: North China Electric Power University, 2015.

薄强, 王丽芳, 张玉旺, 等. 基于SiC MOSFET的无线充电系统桥臂串扰特性[J]. 电力电子技术, 2021, 55(12): 87-90.

BO Qiang, WANG Lifang, ZHANG Yuwang, et al. Crosstalk characteristics of SiC MOSFET-based wireless charging systems[J]. Power Electronics, 2021, 55(12): 87-90.

张宇, 李先允, 王书征, 等. SiC MOSFET栅源回路参数的串联扰动研究[J]. 电气传动, 2021, 51(16): 33-38.

ZHANG Yu, LI Xianyun, WANG Shuzheng, et al. Research on series disturbance of SiC MOSFET gate-source loop parameters[J]. Electric Drive, 2021, 51(16): 33-38.

王建渊, 林文博, 孙伟. 用于全桥变换器的SiC MOSFET驱动电路设计[J]. 电力电子技术, 2020, 54(2): 120-124.

WANG Jianyuan, LIN Wenbo, SUN Wei. SiC MOSFET drive circuit design for full bridge converter[J]. Power Electronics, 2020, 54(2): 120-124.

黄勇胜, 张建忠, 王宁. 一种SiC MOSFET串扰抑制的谐振辅助驱动电路[J]. 电工技术学报, 2022, 37(12): 3004-3015.

HUANG Yongsheng, ZHANG Jianzhong, WANG Ning. A resonant auxiliary drive circuit for SiC MOSFET to suppress crosstalk[J]. Transactions of China Electrotechnical Society, 2022, 37(12): 3004-3015.

何杰, 刘钰山, 毕大强, 等. 电压探头对宽禁带器件高频暂态电压精确测量的影响[J]. 电工技术学报, 2021, 36(2): 362-372.

HE Jie, LIU Yushan, BI Daqiang, et al. Impacts of voltage probes for accurate measurement of high-frequency transient voltage of wide-bandgap devices[J]. Transactions of China Electrotechnical Society, 2021, 36(2): 362-372.

张倬. 数字存储示波器采集控制系统的设计[D]. 成都: 电子科技大学, 2010.

ZHANG Zhuo. Design of a digital storage oscilloscope acquisition and control system[D]. Chengdu: University of Electronic Science and Technology of China, 2010.

CHEN Zheng, DANILOVIC M, BOROYEVICH D, et al. Modularized design consideration of a general-purpose, high-speed phase-leg PEBB based on SiC MOSFETs[C]//IEEE. Proceedings of the 2011 14th European Conference on Power Electronics and Applications. Birmingham: IEEE, 2011: 1-10.

陈幸琼. 新型集成隔离光耦模块原理及驱动设计[J]. 变频器世界, 2013(8): 63-66.

CHEN Xingqiong. Drive design and principle of a new integrated optocouple module[J]. The World of Inverters, 2013(8): 63-66.

ROHM. BM6104FV-C datasheet[DB/OL]. (2014-01-23) [2022-12-25]. https://pdf1.alldatasheet.com/datasheet-pdf/view/575321/ROHM/BM6104FV-C.htmlhttps://pdf1.alldatasheet.com/datasheet-pdf/view/575321/ROHM/BM6104FV-C.html.

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