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Discussion and prospects of active gate driver technology for SiC devices
High-efficiency Traction | 更新时间：2025-09-19

    • Discussion and prospects of active gate driver technology for SiC devices

    • “In the field of silicon carbide devices, experts have discussed the importance of active gate drive technology in optimizing switch characteristics, providing solutions for the promotion and application of SiC MOSFETs.”
    • Electric Drive for Locomotives   Issue 3, Pages: 113-118(2025)

    • DOI：10.13890/j.issn.1000-128X.2025.03.014    

      CLC： U264.3+7;TN304.2+4

    • Received：25 February 2025，

      Revised：2025-04-18，

      Published：10 May 2025

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  • HU Runchen, WANG Jiayi, LUO Xiang, et al. Discussion and prospects of active gate driver technology for SiC devices[J]. Electric drive for locomotives,2025(3): 113-118. DOI：10.13890/j.issn.1000-128X.2025.03.014.

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