最新刊期
期 5 ， 2023
- 摘要：Silicon carbide (SiC) power devices have advantages such as high withstanding voltage, fast switching speed, and low conduction losses. Therefore, they are gradually becoming core components of power conversion systems, especially in areas such as new energy vehicles, renewable energy, energy storage, data centers, rail transit, and smart grids. Power devices applications are becoming increasingly wide-ranging. However, the continuous miniaturization and rapid increase in power density of SiC devices pose new challenges for power module packaging and thermal management. Traditional packaging structures and heat dissipation devices provide high thermal resistance, making it difficult to meet the high heat flux cooling requirements of SiC devices. Additionally, there is a growing demand for integrated heat dissipation packaging in high power density module. In response to the above challenges, this paper provided a detailed introduction and comparative analysis of typical power module packaging structures from both domestic and international sources. Different power module heat dissipation methods including their technical characteristics were enumerated and compared, such as heat spreaders, convective heat transfer, and phase change heat dissipation. Finally, based on previous researches on thermal packaging of SiC power modules, the challenges and future development trends in the next generation of SiC module packaging and thermal management technologies were discussed.关键词：silicon carbide;power module;packaging;thermal management technology
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发布时间：2023-10-12 - 摘要：The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and low loss. This paper, in conjunction with the development history of SiC MOSFET devices, discussed the necessity of transitioning from planar gate technology to trench gate technology. It elaborated on the technical challenges and research progress related to SiC trench gate MOSFET structure design, trench etching processes, trench gate oxide processes and other core issues. Finally, it provided an outlook for future advanced SiC trench gate MOSFET technology.关键词：silicon carbide;trench gate MOSFET;trench process;trench gate oxide;trench structure;novel trench technology
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发布时间：2023-10-12 - 摘要：Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes. III-nitride semiconductor, particularly gallium nitride (GaN), has a wide range of applications because of its excellent physical characteristics. In the past 20 years, with the development of the industry, some common key technological issues of GaN-based devices were resolved, such as large size and high breakdown voltage GaN epitaxy, preparation of stable normally-off devices and CMOS compatible preparation technology. GaN power devices have so far been applied in consumer electronics, but there are still many limitations to further applications like cost, compatibility and reliability. In the future, GaN power devices will develop towards higher power density and reliability, develop in normally-off devices and normally-on devices, and realize power integration in high frequency and low-cost vertical devices. As the technology advances, GaN power devices will be applied at more high-end field of vehicle. This paper mainly introduces the development of III-nitride semiconductor and key generic technological issues of GaN power semiconductor devices fabricated on Si substrates, and analyze the current application bottleneck and future development trend of GaN power devices.关键词：carbon peaking and carbon neutrality;III-nitride;GaN;power semiconductor
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发布时间：2023-10-12 - 摘要：Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power. Although SiC power diodes and metal-oxide-semiconductor field effect transistors (MOSFETs) have good device performance and are widely applied, the one-dimensional theoretical limit of them as unipolar devices still limits the further performance improvement of conventional SiC power devices. As a technology widely used on silicon-based devices, superjunction (SJ) structure can significantly improve the tradeoff between the breakdown voltage and specific on-resistance and thus enhance the performance of the devices. In recent years, SiC SJ devices have become a hot research topic and significant progress has been made in relevant researches. The latest research progress and development direction in the device design and simulation, modeling research, SJ manufacturing process technology of SiC SJ devices were reviewed and summarized in this paper.关键词：silicon carbide (SiC);superjunction (SJ);diode;metal-oxide-semiconductor field effect transistor (MOSFET);research progress
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发布时间：2023-10-12
General
- 摘要：Electrical vehicles and photovoltaic applications played important roles in the development of SiC devices, and promoted the improvement of the SiC industry chain in China. The design and manufacturing are developing rapidly, and the device performance of several domestic manufacturers has reached or approached the international leading level of SiC commercial products. However, the high price of SiC based devices still limits their further penetration into the power market. The miniaturization of SiC chips can significantly reduce the chip cost and has become one of the effective ways to further accelerate the large-scale application of SiC technologies in the power field. The necessity of SiC device miniaturization was analyzed, feasible solutions were proposed, and the rapid progress of SiC technologies was summarized. The major challenges for SiC device miniaturization were revealed, and the prospective development opportunities and future of SiC devices were described to provide a reference for further development of SiC power technologies.关键词：silicon carbide (SiC);wide-bandgap semiconductor;power devices;miniaturization;metal-oxide-semiconductor field effect transistor (MOSFET)
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发布时间：2023-10-12 - 摘要：To address the MOSFETs threshold drift caused by the total dose effect, 1 200 V SiC MOSFETs were used for irradiation experiments. The effect and mechanism of gate bias voltage and high-temperature gate bias annealing after irradiation on the threshold drift of MOSFETs were investigated. Through the analysis using the midband voltage method, it was found that the negative threshold drift was mainly caused by the capture of the irradiation-generated holes by near-interface traps. Experiments and analysis on SiC MOSFETs prepared with different gate oxide annealing conditions revealed that a compromise was needed to consider the effect on channel mobility when performing total dose effect reinforcement by nitride gas annealing. And it was found that the MOSFETs prepared under the annealing condition of 5% nitride gas fraction and 60 min at 1 300 °C had high channel mobility and strong resistance to total dose effect.关键词：4H-SiC MOSFET;total dose effect;threshold drift;gate bias;annealing
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发布时间：2023-10-12 - 摘要：As a high-power fully controlled press-pack device, IGCT's design of fastening force is crucial for its characteristics with the expansion of device diameter and the increase of cascade devices. Taking the 6-inch 6 000 A/4 500 V reverse blocking IGCT as an example, the influence of the fastening force on the device performance was analyzed, the design of local space between IGCT cathode comb bar was optimized and the edge gate design for IGCT chips was adopted. The experiment results show that the optimized device no longer has abnormal gate cathode performance within the rated fastening force range, and the adaptability of the fastening force is improved by more than 20%.关键词：IGCT;fastening force;cathode finger;middle gate, edge gate
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发布时间：2023-10-12
Chip Technology
- 摘要：The evolution of high-power semiconductor module is the most critical factor for upgrading of the power electronics system and development of the industry. In this paper, the updated progresses of power module products and packaging technology are reviewed according to the application fields, and the structure and technology features of new module products are analyzed. Then, challenges for the current power module packaging in terms of technology, cost and new application system requirements are proposed. Challenges towards high frequency, high temperature, high reliability and modular development are discussed. Finally, the medium to long term development trend and prospect of interconnection and joining technology, integration and encapsulation material, compact packaging structure of high-power module are presented.关键词：high-power semiconductor module;insulated gate bipolar transistor;wide bandgap device;novel packaging;advanced technology
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发布时间：2023-10-12 - 摘要：Power cycling test is the most important test to evaluate the package reliability of power semiconductor devices. Bonding wire failure accounts for approximately 70% of power cycle failure modes. It has been proved that the TO (Transistor Outline) device packaged with epoxy resin has a power cycle life about 3 times higher than the device packaged with silica gel under same conditions because of its high elastic modulus. Therefore, it is widely used in double-sided heat dissipation half-bridge power modules of electric vehicles. However, the unstable performance of epoxy resin at high temperature affects the service life of bonding wire. In order to fully understand the influence of epoxy resin on the service life of power device bonding wire, this paper first used power cycle test to analyze the service life performance of epoxy resin power devices at two different glass transition temperatures (Tg) with other conditions kept the same, and the test found out that higher Tg can effectively curb the lifting of bonding wires and improve the service life of devices. Then, for the 1 200 V, 25 A TO devices used in the experiment, a coupled finite element model of electrical-thermal-stress multiphysics was established using COMSOL simulation software to explore the different thermal expansion coefficients before and after the glass transition temperature (Tg) of epoxy resin and the influence of different thickness parameters of epoxy resin on the stress strain of bonding wire, and the service life of bonding wire was predicted by combining the fatigue model. Finally, this paper quantified the simulation parameters by linear regression fitting, which provided references for the design optimization and reliability improvement of epoxy resin packaging materials used for power devices.关键词：power cycling;bonding wire;epoxy resin;glass transition temperature;COMSOL
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发布时间：2023-10-12 - 摘要：Traditional packaging structures of power semiconductor device use aluminum (Al) wire for bonding. This leads to high parasitic inductance and reliability issues, limiting the development of silicon carbide (SiC) power devices. Researchers have proposed a new copper clip interconnection process that enables double-sided heat dissipation and improves the power density of the devices. However, current research mainly focuses on its thermal performance and reliability, lacking exploration of structural design optimization. Further research is necessary to optimize the structure design of multi-chip copper clip interconnections. This study investigated the influence of critical structural parameters of the copper clip power devices on chip stress concentration through simulations. The results indicate that the copper clip thickness has the most significant impact on chip stress concentration, while the copper clip span has the least influence. Optimal structural parameter which was compared with the smallest solder layer stress were used to establish a copper clip device model and the corresponding wire-bonded module. The findings reveal that, under power cycling, the copper clip device shows a more than 10 times improvement in the fatigue life of both the copper clip and solder layer compared with the wire-bonded module. And the unloading groove significantly helps improve the fatigue life of copper clip devices.关键词：Cu clip;stress concentration;SiC;finite element simulation;power cycling
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发布时间：2023-10-12 - 摘要：The rapid development of power semiconductor devices, especially the widespread application of SiC power modules, has put forward higher requirements for ceramic copper-coated substrate in modules, and the warpage of the substrate in module packaging will affect its reliability. The article studied the stress state of the substrate and the relationship between the stress and the warpage, and provided improvement plans to reduce the warpage, including extending cooling time, reducing peak temperature, and adjusting copper volume ratio to improve the matching between the substrate and SiC module, thereby enhancing module reliability.关键词：SiC power module;ceramic copper-coated substrate;stress;warpage;reliability
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发布时间：2023-10-12 - 摘要：The emerging modules without baseplate are widely used in the field of new energy. They have high requirements for the coating of thermal interface material, but there are few related studies. In this paper, simulation research was conducted for the changing rule of the junction temperature of chips on IGBT modules with and without baseplate when the void ratio of the thermal interface material (TIM) is changing. A precise numerical model was established to carry out steady-state thermal simulation experiment. According to the results, quantitative analysis was conducted on the degree to which the chip junction temperature is affected by TIM voids on modules with and without baseplate. The results show that the chip junction temperature of the module with baseplate is lower than that of the module without baseplate, and the chip junction temperature is about 8.578 K and 9.544 K lower, respectively. When the void ratio of TIM layer increases, the junction temperature rise rate of the module without baseplate is greater than that of the module with baseplate, and the temperature rise rate of the large chip and the small chip of the module without baseplate is about 32.190 times and 240.875 times respectively that of the module with baseplate. The junction temperature rise rate of large chip is lower than that of small chip, which is about 23 times and 3 times, on modules with baseplate and without baseplate respectively. Modules without baseplate are more sensitive to the state of the TIM layer and have higher requirements.关键词：power device without baseplate;finite element;steady-state thermal simulation;thermal interface material;void ratio;junction temperature
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发布时间：2023-10-12
Packaging Technology
- 摘要：The structure function method is critical for obtaining Cauer thermal network models for power devices. However, in its deconvolution step, different calculation methods have a large impact on the results, which affects the accuracy of the thermal network model. The underlying mechanism of each calculation method, the amplification effect of different calculation methods on noise, and the reasonable selection of calculation methods are very important and need to be solved urgently at present. In this paper, by studying the core aspect of deconvolution in the structure function method, the theoretical analysis of three deconvolution calculation methods was carried out from three aspects: calculation method input, calculation method core, and error analysis; data analysis was carried out from six aspects: number of iterations, calculation time, sampling frequency, accuracy of calculation methods, selection of calculation methods and practical application. The suitable data characteristics were also summarized for each of the three methods according to their calculation characteristics, which provide reference and guidance for selecting appropriate fast calculation methods of thermal network models for different types of input data.关键词：power devices;structure function method;thermal network model;deconvolution;Bayesian calculation method;Fourier calculation method
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发布时间：2023-10-12 - 摘要：Studying the influencing factors of solder lifetime is of great significance to improve the reliability of IGBT modules, but the influence of solder voids as a solder layer defect on the power cycling lifetime of IGBT modules is still unknown. Considering that the process voids generated in the IGBT module manufacturing process have random size and random unknown characteristics, power cycling tests were conducted under the same test conditions for double-sided cooled IGBT modules with different void ratios. The test results show that the higher the void ratio, the shorter the power cycling lifetime of the device under test. In order to reveal its influence mechanism, a three-dimensional finite element model of IGBT modules with different void ratios was established, and the voids built have random size and random position characteristics consistent with the actual process voids. Through finite element simulation, it is found that the higher the void ratio, the greater the maximum temperature of the solder layer and the chip, and the greater the viscoplastic strain caused, so the power cycling life is shorter. According to the power cycling test and fatigue simulation results, the recommended limit value for the void ratio of the IGBT module solder layer is 3%. The research results can provide guidance for the screening steps of solder voids of IGBT modules.关键词：power cycling lifetime;solder void;void ratio;finite element simulation;random size;random position
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发布时间：2023-10-12
Reliability Technology
- 摘要：During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche and the avalanche tolerance of IGBT module. The results show that current and inductance have a great effect on the dynamic avalanche of the module. Gate resistance can delay the occurrence of dynamic avalanche inside the module and improve the avalanche resistance of the module. Bus voltage also has a huge effect on the improvement of module avalanche resistance. There is a large difference in avalanche resistance of the module between normal temperature and high temperature.关键词：IGBT module;dynamic avalanche;current;inductance;gate resistance;voltage;temperature
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发布时间：2023-10-12 - 摘要：Monitoring the junction temperature of power devices accurately is very important for device manufacturers and applications. The mainstream temperature-sensitive electrical parameter method is widely used in various fields because of its fast response speed and accurate measurement. At present, it is relatively mature in silicon-based device applications. However, due to the high switching characteristics of SiC devices and the defects of gate oxide layer, the electrical parameter method generates stronger parasitic oscillation and high frequency EMI noise. This causes large errors in measuring the initial temperature of the device. Therefore, a test scheme based on the improved electrical parameter method for gate time delay was proposed to suppress the VDS oscillation at the device turn-off moment. Through simulation and circuit application verification, as well as comparative analysis of thermal resistance test, it was proved that this scheme could effectively suppress waveform oscillation and measure the junction temperature of the device accurately.关键词：gate voltage time delay;temperature-sensitive electrical parameters;structure function;SiC MOSFET;thermal resistance
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发布时间：2023-10-12 - 摘要：In order to better carry out double pulse testing for power semiconductor devices, the influence of the turn-on pulse width on DPT (double pulse testing) of power semiconductor devices is investigated systematically in the paper. The relationship between switching characteristics of IGBT and MOSFET devices and the turn-on pulse width was studied by theoretical analyzing and simulation verification. It was found that the current deviation caused by turn-off delay time and the self-heating effect caused by the testing can affect both IGBT and MOSFET devices. The current deviation caused by turn-off delay time can affect the DPT testing results if the turn-on pulse width is too small. While the self-heating effect caused by the testing can significantly affect the DPT testing results if the turn-on pulse width is too large. Besides, the non-stationary switching effect affects the DPT testing results when the turn-on pulse width is too small. The non-stationary switching effect can cause severe waveform oscillation which may even damage the IGBT, while MOSFET cannot be affected by the nonstationary switching effects. The research results indicate that both IGBT and MOSFET devices have reasonable ranges of turn-on pulse width (or inductance of the load inductor). Within this range, the switching characteristics of the devices are almost not affected by the turn-on pulse width. It is recommended that the upper limit of the turn-on pulse width can be estimated through the thermal impedance curve in the product manual, and the lower limit of the turn-on pulse width can be verified by the double pulse testing.关键词：power semiconductor device;double pulse testing;self-heating effect caused by testing;nonstationary switching effect;current deviation caused by turn-off delay time
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发布时间：2023-10-12 - 摘要：As a power switching device, IGBT has many advantages, such as high current density and low saturation voltage and it is widely used in various power engineering fields. However, IGBT is the most important failure part of power converter system. When the IGBT module is short-circuited, the short-circuit current increases sharply, causing the IGBT chip to generate heat violently. When the short-circuit energy is high enough, the chip will fail and a large amount of high-temperature and high-pressure explosive gas will be generated. After initial expansion, the explosive gas will act on the shell in the form of shock wave energy and gas. When the module shell cannot bind the failure energy, the module shell will explode. Five methods were proposed in the paper to evaluate the failure energy shock, including the shell damage assessment method, high-speed photography method, shock sensor measurement method, electrical parameter testing method, and capacitive energy release method. Through the test verification, it was found that the shell damage degree assessment method was more effective, which can make the impact of short-circuit energy on the shell become a quantitative calculation problem, so as to guide the optimization of the shell structure, evaluate the strength of the shell material, and limit the secondary damage of the failure energy to other subsystems.关键词：IGBT;failure energy;short-circuit test;explosion shock wave;shell damage assessment method
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发布时间：2023-10-12 - 摘要：The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems. Based on the conduction voltage drop of IGBT, this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature. Firstly, combined the operating principle of IGBT, the paper derived the expression for the conduction voltage drop. Then, according to the characteristics of low-current and high-current saturation voltage drop, the junction temperature monitoring models was established. Finally, it designed a low-current constant current source circuit and a conduction voltage drop sampling circuit, and conducted experiments to verify the models. The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature, while the high-current saturation voltage drop is nonlinearly related. The measurement errors for both methods are 1.29% and 4.91% respectively.关键词：IGBT module;conduction voltage drop;junction temperature measurement;low-current saturation voltage drop method;high-current saturation voltage drop method
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发布时间：2023-10-12
Inspection & Testing Technology
- 摘要：This article conducted a research study on the optimal parameter calculation of the boost circuit based on the flying-capacitor for the step-up conversion in series-connected photovoltaic (PV) inverters with a voltage rating of 1 500 V. The input and output parameters of the designed flying-capacitor boost circuit were determined based on the specifications of mainstream PV panels. According to the working principle of the flying-capacitor boost circuit, the selection and verification calculation of power semiconductor modules were carried out. Subsequently, the minimum input filtering inductance, input filtering capacitor, flying capacitor, and other parameters were calculated at the circuit's operating limits. Dynamic control strategies were proposed. Finally, through simulations, the effectiveness and accuracy of the parameter design method for the main circuit based on the flying-capacitor boost circuit were demonstrated. This research study provides a design method for the step-up circuit of series-connected inverters with a voltage rating of 1 500 V.关键词：parameter design;photovoltaic series-connected;flying capacitor boost;flying capacitor;power semiconductor module
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发布时间：2023-10-12 - 摘要：Voltage sourced converter based high voltage direct current (VSC-HVDC) is the core technology of new type of power systems with new energy as its main part. VSC-HVDC has outstanding advantages such as independent control of active and reactive power, fast and flexible response, strong scalability, and no commutation failure. It is widely used in new energy transmission, grid interconnection, island power supply, and long-distance and high-capacity power transmission. Power electronic devices play an important role in AC/DC conversion in VSC-HVDC systems. At present, 3.3 kV and 4.5 kV power devices (IGBTs) are generally used in VSC-HVDC projects at home and abroad. To meet the needs of long-distance and high-capacity DC transmission of large new energy projects, and the needs of large-scale development and utilization of offshore wind farms, power devices are developing towards higher voltage and larger current to help achieve the carbon peaking and carbon neutrality goals. In this paper, the development status and trend of power electronic devices in VSC-HVDC technology were reviewed, the application status of power electronic devices in VSC-HVDC projects was systematically described with several representative domestic projects as examples, and the main technical characteristics of power electronic devices for VSC-HVDC were emphasized. Finally, the prospective application directions and development trends of high-voltage and high-power devices were explored.关键词：voltage sourced converter based high voltage direct current (VSC-HVDC);VSC valve;power electronic devices;high voltage;large current
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发布时间：2023-10-12
Device Application Technology
- 摘要：Chemical vapor deposition equipment is used for homogeneous epitaxial growth on N-type 4H-SiC substrate. The film quality of epitaxial growth depends on the temperature field and air-flow field of epitaxial growth equipment. In this paper, the horizontal hot-wall technology route was taken as an example. Through the study of the temperature field and the airflow field of the reaction chamber, the optimal reaction chamber structure was obtained, and through the study of the epitaxial process, the excellent process results were obtained. The epitaxial growth rate was more than 60 μm/h, the uniformity of different epitaxial film thicknesses was less than 1.2%, the uniformity of different doping concentrations was less than 3%, the defect density was less than 0.2 ea/cm2, and the root-mean-square roughness of the epitaxial layer surface was less than 0.15 nm. Meanwhile, stable results of 30 consecutive epitaxial process controls were achieved.关键词：silicon carbide;epitaxial equipment;temperature field;air-flow field
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发布时间：2023-10-12
Equipment Technology
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