最新刊期
期 5 ， 2021
- 摘要：The evolution of modern Si based high power semiconductor devices and recent progress of novel device structures,as well as the status of wide bandgap semiconductor materials and devices were presented in this paper. The development and application status of domestic high power semiconductor devices for rail transportation, DC transmission and new energy vehicles were introduced. Finally, the technology challenges and development trends of high power semiconductor technology were discussed.关键词：power semiconductor device;Si material;thyristor;GTO;IGCT;IGBT;MOSFET;wide bandgap
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发布时间：2021-12-13 - 摘要：With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further enhance device performance in recent years. Combining the advantages of the field stop IGBT and SJ structure, super junction IGBT (SJ-IGBT) can withstand a high voltage and achieve a low loss with a short drift region length. However, as a bipolar device, the SJ-IGBT has different working principle from the super junction MOSFET. Based on the principle of super junction, the structural characteristics and mechanism were revealed as well as the latest research progress of the SJ-IGBTs was summarized.关键词：super junction (SJ);insulated gate bipolar transistor (IGBT);structural characteristics;recent progress
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发布时间：2021-12-13 - 摘要：With the advancement of electronic power technology, power devices are constantly developing towards high power density and high integration. The interconnect layer, as a key channel for heat transfer in power modules, has an important impact on the realization of high-temperature and reliable applications of power modules. Low-temperature sintered silver has become one of the research focus on packaging interconnect materials due to its excellent characteristics such as low process temperature, high interconnect strength, high operating temperature, high electrical conductivity, and high thermal conductivity. However, the high sintering driving force requirement, low sintering density, and high thermal-mechanical stress limit the wide application of low temperature sintered silver technology in the field of large-area package interconnects. The existing research methods and results from the material and process viewpoints were summarized and compared, and the research focus and development direction of low-temperature sintered silver packaging interconnect technology were proposed, which was important for expanding the application of low-temperature sintered silver technology.关键词：low-temperature sintered silver;package interconnection;sintering driving force;sintering density;thermal-mechanical stress
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发布时间：2021-12-13 - 摘要：Wide bandgap power devices with excellent performance over traditional silicon power devices have been introduced as the prime candidate for power electronics applications. However, interconnections on the chip topside in the traditional packaging are now limiting the lifetime of wide bandgap power devices. It is necessary to replace aluminum bond wires with copper bond wires, ribbons, and lead-frames with the help of bond buffer technologies to ful fill the requirements of wide bandgap power devices under high temperature operation conditions. The reliability performances of different bond buffer technologies and bonding materials under power cylcing tests were reviewed. The Cu-Invar-Cu bond buffer combined with Cu bonding material showed the most robust power cycling capability among all bonding materials. Failure analysus shows that the weak point of the packaging of wide bandgap power devices has been changed from the bonding material to the Al2O3 ceramic substrate or the aluminum metallization layer of the chip.关键词：bond buffer;reliability;silicon carbide device;galium nitride device;packaging
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发布时间：2021-12-13
General
- 摘要：The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment. The planar SiC MOSFET shows the best anti-surge ability, and the maximum surge current density peak reaches 35 A/mm2, while the anti-surge ability of double groove and asymmetric groove SiC MOSFET is roughly the same, 22 A/mm2 and 25 A/mm2 respectively. After the maximum surge current, the threshold voltage, drain current and breakdown voltage of the three SiC MOSFET devices fail. The failure mechanism is a three terminal short circuit caused by thermal breakdown.The comparative test results show that the planar SiC MOSFET shows good anti-surge current ability due to lower gate oxide defects,while the double channel SiC MOSFET is more likely to fail in surge test due to stronger thermal effect caused by channel leakage current under surge stress.关键词：surge capability;silicon carbide;MOSFET;surge failure mechanism;body diode
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发布时间：2021-12-13 - 摘要：For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studied, and compared with the measured data to verify the correctness of the model.From the perspective of uneven expansion of space charge region, the micro mechanism of "capacitance turning" phenomenon in C-V characteristic test of devices with different process routes was analyzed. Then, the variation of gate voltage, drain current and drain source voltage with time in the switching process of SJ-MOS under inductive load was studied. Finally, a parasitic diode reverse recovery test platform was built to explore the effects of different processes on parameters such as reverse recovery charge and peak current. The research content of this paper could guide the device design to a certain extent and improve the matching degree of power semiconductor devices in locomotive application scenarios.关键词：super junction MOSFET;C-V characteristic;body diode;double pulse test;reverse recovery test
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发布时间：2021-12-13 - 摘要：As a new fully controlled power electronic device with bidirectional blocking voltage and forward controllable turn off, reverse blocking IGCT has attracted more and more attention in power grid applications. The status,causes of commutation failure in HVDC applications and the requirements for power semiconductor devices were analyzed, and the characteristics of different devices and different IGCT types was compared. At the same time, the static characteristics, on-state characteristics and switching characteristics of 4.5 kV reverse blocking IGCT were analyzed theoretically and simulated. Finally, the gate driver driven high-level energy taking, black start and adaptability to HVDC conditions were verified by synthesis test. The test results showed that 4.5 kV reverse blocking IGCT could be used as one of the preferred devices to enhance the ability of HVDC to resist commutation failure.关键词：HVDC;commutation failure;RB-IGCT;static characteristics;switching characteristics;black start;simulation
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发布时间：2021-12-13 - 摘要：When the IGBT is turned on or off, it first obtains the driving signal from the gate pad, and then relies on the polysilicon layer to reach various areas and corners of the chip. However, due to the distributed resistance effect of the gate formed by the polysilicon layer, each primary cell in the chip cannot be turned on or off at the same time. Therefore, there is a current concentration phenomenon in the dynamic process of the IGBT chip, especially when the chip area is large, the current concentration phenomenon is particularly obvious, which leads to the problem of the dynamic process distribution effect. Around the electrical and temperature characteristics of IGBT, the dynamic process distribution of high-voltage IGBT chip was studied, the device structure of IGBT chip was modeled, the IGBT model with grid resistance and grid distributed resistance with Spice circuit was built, and the changes of voltage, current and power in the dynamic process of IGBT chip were simulated and analyzed. The thermal simulation model of IGBT was constructed by using ANSYS simulation software, and the influence of current concentration effect on device surface temperature distribution in dynamic process distribution was simulated and analyzed, which provided an important reference basis for improving the uniformity of device current and temperature distribution.关键词：IGBT;current concentration effect;gate resistance;gate distributed resistance;temperature distribution
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发布时间：2021-12-13 - 摘要：The breakdown voltage is an important parameter for IGBT, and the breakdown voltage of the device is mainly related to the termination structure, so the research on the termination structure has always attracted attention. The termination structure of 1 700 V IGBT was designed in this paper. The termination technique combining field limiting ring and field plate could reduce the peak electric field on the device surface and improve the breakdown voltage. The termination structures with different field plate length and oxide thickness were simulated. Polynomial fitting and multiple regression were used to analyze the relationship between breakdown voltage and surface electric field distribution, the length of field plate on each ring and oxide thickness. Based on this, the breakdown voltage and surface electric field of the device could be predicted, and the time spending on termination design could be shortened. After adjustment, the breakdown voltage has achieved 1 927 V with 366 μm length on termination structure, and efficiency of the termination is 91.5%. The peak of surface electric field was effectively reduced and the surface electric field distribution was optimized.关键词：IGBT;field limiting ring;field plate;breakdown voltage;multiple regression;fit polynomial;simulation
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发布时间：2021-12-13 - 摘要：The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel states were deeply studied in this paper. First, a surge current test platform was built and the devices of CREE and Infineon were tested. Then, the changes of threshold voltage, on-resistance,body diode voltage, and drain leakage current before and after the surge current test were measured and compared. After the device failed, the change of its internal structure was observed by scanning acoustic microscope, and the failure reason of the device was analyzed. Test results showed that the reliability of the gate and the metal layer together determine the reliability of the device under the surge current in SiC MOSFET devices. On the one hand, channel conduction helped to reduce the maximum junction temperature and improve the reliability under surge current for devices with high gate reliability, on the other hand, the channel closing helped to protect the gate of devices with low gate reliability.关键词：SiC MOSFET;channel;metal layer;body diode;surge current;gate reliability
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发布时间：2021-12-13 - 摘要：As an important device for energy conversion and transmission, high-power thyristors are widely used in fields such as high-voltage direct current transmission. With the increasing requirements of the power grid for the transmission power capacity,increasing the conduction capacity of the thyristor has attracted much attention. However, as the capacity increases, the conventional straight-line oblique angle modeling technology may reduce the effective conduction area of the cathode while ensuring that the angle is small enough. In order to solve this problem, a high-power thyristor with a low-occupancy terminal structure was studied. In this thyristor, a broken line shape was adopted to achieve a smaller angle on the terminal structure side to achieve the same electric field optimization as a line oblique angle. Meanwhile, the effective conduction area of the cathode could be ensured. Finally, a TCAD model of an 8.5kV thyristor device was established and analyzed by using the Silvaco platform to verify the feasibility of the proposed structure.关键词：UHV;thyristor;Silvaco TCAD;low proportion;terminal structure;blocking voltage
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发布时间：2021-12-13
Chip Design and Manufacturing
- 摘要：The traction IGBT modules are the core power devices in the traction converters of modern railway locomotives for power convert and output. The new generation traction IGBT modules using the latest IGBT4, EC4 diode, VLD and DLC chips terminal edge technology which optimized design of chip areas and gate charges and had low on-state voltage, good electrical characteristics at high or low temperature and better performances of safe operation area. A new package with IHV-B housing had better internal chips layout and interconnect design to reduce stray inductance inside IGBT modules. The static losses of chips and the thermal resistance between the chip junction and module case could be reduced by increasing more chips active area. The improved power terminal structure had a good temperature distribution and better anti-vibration performance. The IGBT4 modules had passed a series of strict reliability tests with good environmental adaptability, power cycling capability and high reliability. Applying IGBT4 modules could improve the power density and integration of traction converter and make a miniaturized and lightweight solution for traction system with long lifetime.关键词：traction;IGBT;modules;high power;converter
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发布时间：2021-12-13 - 摘要：High performance, low cost and high reliability integrated power modules for electric vehicle applications are leading the innovation in power electronic technology. In this paper, a high-performance double-sided cooling IGBT power module was developed based on the double-sided cooling packaging structure and the industry advanced packaging technology. From the simulation and test data, the IGBT module has excellent thermal and electrical performance, significantly improved power processing capacity and sufficient power cycle reliability.关键词：IGBT power module;EV;HEV;integrated heat sink;double side cooling (DSC);simulation
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发布时间：2021-12-13 - 摘要：On the package requirements of SiC devices of high operate temperature, high power density and low stray inductance,a double side cooling SiC power module was designed. The simulation results displayed that the power module has good current balance and low stray inductance. To fully explore SiC module capability, a full Ag sintering process and process fl ow was developed.The samples were manufactured. The dynamic and static test displayed that samples haved good static and dynamic characteristic, and under the condition that the RDS-on was 3.95 mΩ and drain source current Id was 350 A, the total stray inductance Ls was 11.2 nH. The test shows that the full Ag sintereing double-sided heat dissipation SiC module has excellent dynamic and static performance and has great application prospect.关键词：full Ag sintereing;double side cooling;SiC module;simulation
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发布时间：2021-12-13
Module Design and Packaging
- 摘要：The different turn off characteristics of MOSFET and IGBT and their influence on the parallel current sharing characteristics at the moment of turn off were described. The common MOS gate structure of MOSFET and IGBT leads to similar turn-on characteristics in the device turn-on process. However, the difference between the unipolar structure of MOSFET and the bipolar structure of IGBT leads to different shutdown mechanisms in the shutdown process (except the tail current). This different shutdown mechanism is especially reflected in the control degree of gate voltage on the shutdown current. The turn-off current of MOSFET is completely and directly controlled by the gate voltage, while the off current of IGBT is not completely and directly controlled by the gate voltage to some extent. Different shutdown mechanisms lead to different parallel current sharing characteristics at the moment of shutdown, especially when the circuit parameters are mismatched. In this paper, the above problems were studied through theoretical analysis and simulation modeling. The simulation and experimental results verified the viewpoint of this paper.关键词：MOSFET;IGBT;switching characteristics;parallel current sharing
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发布时间：2021-12-13 - 摘要：In view of the increasingly harsh thermal management conditions in the rail transit field, a 3D composite phase change radiator with more efficient heat dissipation capacity was studied. The research methods of numerical simulation and experimental testing were applied, and the 3D composite phase change radiator was compared with the double-sided heat pipe radiator of the same volume and the water-cooling system. The results showed that, compared with the double-sided heat pipe radiator, the 3D composite phase change radiator under the same wind speed and power conditions could reduce the thermal resistance by 7.8%~10.5%, the pressure drop by 57.5%~63.6%, and the temperature uniformity effect by about 52%; under the same fan cooling system, the maximum allowable power of a single IGBT could be increased by 670 W, an increase of about 26.8%; the thermal performance of the rated working condition was close to that of the water cooling system.关键词：3D composite phase change radiator;rail transit;thermal management;numerical simulation;IGBT
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发布时间：2021-12-13 - 摘要：Aiming at the problem that the junction temperature of IGBT chip is difficult to measure directly, a calculation method of IGBT junction temperature based on heat conduction model was proposed. The heat conduction model of the converter was established based on the classic Cauer RC network structure; the parameter identification of the heat conduction model of the converter was completed by combining the concept of transfer function and the structure of heat conduction model; the real-time power loss of the IGBT was calculated by consulting the IGBT product manual and the actual working conditions; finally, the simulation calculation was carried out by MATLAB/Simulink, and the real-time junction temperature of IGBT chip on the converter was obtained. This method realizes the fast calculation of IGBT chip junction temperature, provides important data support for IGBT reliability and life evaluation, and provides a new scientific basis for the design and development of power modules and converters.关键词：IGBT chip;heat conduction model;power loss;junction temperature calculation;simulation
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发布时间：2021-12-13 - 摘要：The application conditions of rail transit converter are relatively strict, which requires high reliability and service life of converter and IGBT devices. In order to improve the junction temperature of IGBT and the application life and reliability of the converter, a general loss calculation model was constructed based on the working mode of locomotive converter module to realize the on-line estimation of the junction temperature of IGBT devices of the converter; On this basis, combined with the application scenario of rail transit, a comprehensive active junction temperature control method was designed from the two dimensions of switching loss and heat dissipation system. Simulation and experiments showed that the implementation of active junction temperature control was feasible.关键词：converter;IGBT;loss;junction temperature estimation;active control;simulation
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发布时间：2021-12-13
Application and Testing Techniques
- 摘要：The silver sintering process and copper wire bonding process used in IGBT module packaging were studied. Based on a series of quality characterization and evaluation methods, the process parameters of silver sintering and copper wire bonding were verified, optimized and analyzed. The influence of the surface finish coating on the strength of the sintered layer and the bonding interface of the copper wire was analyzed. Finally, the surge capacity and power cycle life of the trial-produced modules were tested. The results showed that the surge capacity and power cycle life of the modules with silver sintering and copper wire bonding technology were greatly improved compared with the ordinary modules, and the interface of silver sintering and copper wire bonding did not degrade obviously.关键词：silver sintering;copper wire bonding;reliability;power cycling
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发布时间：2021-12-13 - 摘要：Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar transistors(IGBT). The mechanism of silver sintering technology, and the structure of press-pack IGBT by silver sintering technology were introduced. Then, the thermal resistance difference between silver sintered sub-units package module and soldering sub-units package module was analyzed and compared by finite element method. Finally, voltage drop parameters, pressure uniformity, thermal resistance characteristics and long period power cycle interface reliability were verified and compared to the press-pack IGBT device by traditional soldering IGBT device.The paratical application shows that the reliability of the press-pack IGBT device with silver sintering technology has greatly improved.关键词：silver sintering technology;press-pack IGBT;reliability;FEA (finite element analysis)
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发布时间：2021-12-13 - 摘要：Glassivation passivation parts (GPP) is a general term for glass passivation devices. Based on the ordinary silicon rectifier diffusion sheet, a layer of glass is burned around the P/N junction surface of the pipe core to be divided. The glass has a good combination characteristic with monocrystalline silicon, which can make the P/N junction obtain the best protection and improve the stability of the device. By completing the industrial production of screen printing through experiments, the paste of screen printing protective layer, screen printing glass layer slurry technology and the drying process of screen printing glass layer were determined,and the industrial production capacity of 250 000 GPP wafers per month by screen printing was realized.关键词：GPP chip;screen printing method;protective layer ink;glass passivation;glass bubble;industrial production
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发布时间：2021-12-13 - 摘要：In order to improve the glossiness of acid etched wafer and achieve stable mass production, by optimizing process of producing silicon wafer, rotate and grind the wafer to be double-sided grinding wafer, then acid etch the wafer. The glossiness of acid etched wafer reached more than 360 Gu (re fl ectivity greater than 98%) and the service life of etchant was extended to 50 000 wafers.The application field of acid etching wafer was expanded, the processing cost of products was reduced and the processing efficiency of products was improved.关键词：acid etching wafer;rotating grinding;removal;damage layer;re fl ectivity
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发布时间：2021-12-13
Process and Manufacturing Technology
- 摘要：Four popular engineering power device lifetime evaluation models based on power cycling test was introduced.Aiming at the problem that these models ignore the complexity of power device packaging and actual working conditions, it was proposed that the power cycle test for life evaluation was more suitable to select the threshold based on device degradation rather than device failure, and finally the threshold setting method, fast power devices life evaluation formula and remaning life evaluation method for quickly completing the degradation evaluation based power cycle test under actual working conditions were provided. This method can quickly evaluate the lifetime of power devices with low cost in engineering practice.关键词：power cycling test;power device lifetime evaluation;residual life;degradation;fast engineering approach;Bayes
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发布时间：2021-12-13 - 摘要：Power device designers often need to design and optimize devices by device simulation, however, due to the simulation results are unknown before the simulation, designers need to gradually adjust the relevant parameters to make the simulation results constantly approach the target value, which costs much time. There is no effective solution to this problem. In order to solve the problem, an optimal prediction model based on neural network was proposed to determine the blocking voltage of SiC MOSFET. The test temperature, the first field limiting ring spacing, the ring spacing change step, the number of field limiting rings and the drift zone concentration were regarded as independent variable, and brought into the device simulation software for simulation. The blocking voltage of VDMOSFET was obtained as the dependent variable, which was brought into BP neural network and RBF neural network for prediction respectively, and the prediction errors of the two were compared. The results show that the BP neural network prediction model by using LM algorithm can well predict the forward blocking voltage of VDMOSFET,and save a lot of time for designers.关键词：blocking voltage;SiC MOSFET;field limiting ring;neural network;prediction model;simulation
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发布时间：2021-12-13 - 摘要：Passivation crack on the surface of power chip seriously affects the reliability of power devices. In this paper, the mechanism of passivation layer failure was explored by temperature cycling test on D-PAK module. Temperature cycling tests showed that the cracks developed in the passivation film over the aluminum film close to the boundary, but were rarely observed in stripe. If the cracks in passivation film remains the same as the first cracks in manufacturing processes, there would be a long service life for the device. This requires that the stress intensity factor is always less than the toughness of passivation film. Otherwise, the crack will grow and propagate in the subsequent cycles. Griffith criterion can be used to know whether cracks will occur or not. Finally, the estimation method of the critical value of crack initiation cycle was provided, and the crack initiation diagram was illustrated as the failure criterion of passivation layer. A method was proposed to predict whether the passivation has ratcheting deformation or crack to improve the reliability of devices.关键词：passivation crack;ratchet effect;power packaging;reliability
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发布时间：2021-12-13 - 摘要：Aiming at the aging failure of IGBT, an improved wavelet neural network sequentially prediction method based on genetic algorithm was proposed. Based on the analysis of IGBT failure mechanism, with the IGBT aging data, the instantaneous collector emitter peak voltage was selected as the failure characteristic parameter, the training set and test set were constructed by the sliding time window method, and then the wavelet neural network prediction model improved by genetic algorithm was built in MATLAB for prediction, which was compared with the traditional wavelet neural network prediction model. The experimental results show that the mean square error of the improved wavelet neural network is 0.017 1, the root square mean error is 0.130 9, and the average absolute error is 0.109 6, compared with the traditional wavelet neural network prediction model, they are reduced by 0.005 7,0.020 0 and 0.064 0 respectively, which effectively improves the accuracy of IGBT sequentially prediction.关键词：IGBT;failure mechanism;wavelet neural network;genetic algorithm;sequentially prediction
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发布时间：2021-12-13 - 摘要：In this paper, the reliability of 3D composite phase change heat dissipation technology for the rail transit vehicle converter was tested and verified based on the external environment and its self characteristics. The stability of the working medium was analyzed by GC-MS and ICE-MS firstly, and the heat dissipation performance of the heatsink was tested. The shock resistance and anti-vibration performance, heat and cold tolerance, corrosion resistance and pressure blast resistance of the heatsink were tested in harsh environments. The results showed that the 3D composite phase change heat dissipation technology has credible stability and reliability, which satisfies the conditions of vehicles running on plateau, alpine cold, coastal environment, and its frequent vibration conditions. More than 2 000 pieces of 3D composite phase change heatsinks has been installed on CRH380A after the 1.2 million kilometers on board functional assessment, and no failure has occurred in the past 3 years, so that the reliability of the 3D composite phase change technology was verified.关键词：heatsink;3D composite phase change;rail transit vehicle;reliability
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发布时间：2021-12-13 - 摘要：Space vector pulse width modulation (SVPWM) can be divided into five-segment SVPWM and seven-segment SVPWM. In order to improve the reliability of the traction inverter, the junction temperature analysis and lifetime prediction of the key components of the IGBT module based on the task profile were carried out, and the effects of two different SVPWM modulation strategies on the device lifetime were studied. Firstly, the electrothermal model of traction inverter system of high-speed train was established, and the effects of EMU running speed and different SVPWM modulation strategies on device loss were analyzed; Then,taking the all-day simulation condition of a CRH3 EMU as an example, the junction temperature of power devices was calculated, and the junction temperature information of thermal cycle of power devices was extracted by rain fl ow counting method, including junction temperature fl uctuation and maximum junction temperature. Finally, the Norris-Landzberg lifetime model and Miner linear cumulative damage model were used to calculate the damage of power devices, and the lifetime of power devices under the two SVPWM modulation strategies was predicted and compared. The simulation results showed that the junction temperature fluctuation and maximum junction temperature cycle of the diode were larger than those of IGBT. Adopting the seven-segment SVPWM modulation strategy could prolong the life of the IGBT module by 17.8% and saved the maintenance cost of the EMU.关键词：IGBT module;traction inverter;life prediction;reliability;space vector pulse width modulation;CRH3 EMU;high-speed train
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发布时间：2021-12-13 - 摘要：In order to investigate the power cycling failure mechanisms of bonding wires in automotive power modules, experiments were carried out based on electro-thermal FEM simulation, considering junction temperature variation (ΔTj),bond wires current (IC), and medium temperature (Tm) as acceleration factors. Comparing with traditional power cycling test using large amount of samples, single bond wire were tested in this work, which greatly reduced the number of samples needed. The lift-off of bond wires were monitored through the variation of IGBT's VCE(sat) value. The lifetime of power cycling test was extracted by using lifetime model and Weibull distribution.It can reduce the cost and period of experiments to 80% by using the new power cycling statistical method in this paper.关键词：automotive IGBT;degradation mechanism;wire bonding;single bonding wire samples;power cycling lifetime;simulation
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发布时间：2021-12-13
Reliability and Failure Analysis
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