Application of Silver Sintering Technology in Press-pack IGBTs

Tingchang SHI; Han LI; Guiqin CHANG; Haihui LUO; Guozhong DONG; Guoyou LIU

doi:10.13890/j.issn.1000-128x.2021.05.020

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Application of Silver Sintering Technology in Press-pack IGBTs

Process and Manufacturing Technology | 更新时间：2021-12-13

- Application of Silver Sintering Technology in Press-pack IGBTs
- Electric Drive for Locomotives Issue 5, Pages: 128-133(2021)
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南　株洲　412001
  2.新型功率半导体器件国家重点实验室，湖南　株洲　412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.05.020
  CLC：
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Tingchang SHI, Han LI, Guiqin CHANG, et al. Application of Silver Sintering Technology in Press-pack IGBTs. [J]. Electric Drive for Locomotives (5):128-133(2021)
DOI：

Tingchang SHI, Han LI, Guiqin CHANG, et al. Application of Silver Sintering Technology in Press-pack IGBTs. [J]. Electric Drive for Locomotives (5):128-133(2021) DOI： 10.13890/j.issn.1000-128x.2021.05.020.

摘要

银烧结技术具有低温连接、低热阻、低应力和高熔点等特点，已成为保证绝缘栅双极型晶体管（IGBT）界面连接的可靠性应用技术。文章分析了银烧结技术工艺和引入银烧结技术的压接型IGBT器件结构组成；利用有限元方法对比分析了银烧结子单元和焊接子单元封装的2种压接型IGBT器件热阻差异；通过压降参数、压力均匀性、热阻特性和长周期功率循环界面可靠性这4个维度对比了银烧结IGBT器件和常规焊接IGBT器件的特性差异。实际应用证明，引入银烧结技术的压接型IGBT器件，其可靠性得到了大幅度提升。

Abstract

Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar transistors(IGBT). The mechanism of silver sintering technology, and the structure of press-pack IGBT by silver sintering technology were introduced. Then, the thermal resistance difference between silver sintered sub-units package module and soldering sub-units package module was analyzed and compared by finite element method. Finally, voltage drop parameters, pressure uniformity, thermal resistance characteristics and long period power cycle interface reliability were verified and compared to the press-pack IGBT device by traditional soldering IGBT device.The paratical application shows that the reliability of the press-pack IGBT device with silver sintering technology has greatly improved.

关键词

银烧结技术压接型IGBT可靠性有限元方法

Keywords

silver sintering technologypress-pack IGBTreliabilityFEA (finite element analysis)

references

窦泽春, 刘国友, 陈俊, 等. 大功率压接式IGBT器件设计与关键技术[J]. 大功率变流技术, 2016(2): 21-25.

DOU Zechun, LIU Guoyou, CHEN Jun, et al. Design and key technologies of high-power press-pack IGBT device[J]. High Power Converter Technology, 2016(2): 21-25.

王愈轩. 压接式IGBT封装技术研究[D]. 北京: 华北电力大学, 2017.

WANG Yuxuan. Research on the packaging technology of press-pack IGBT[D]. Beijing: North China Electric Power University, 2017.

刘国友, 王彦刚, 罗海辉, 等. IGBT模块的热设计概述[J]. 中国电力, 2020, 53(12): 55-61.

LIU Guoyou, WANG Yangang, LUO Haihui, et al. A review of thermal design for IGBT module[J]. Electric Power, 2020, 53(12): 55-61.

梅云辉, 冯晶晶, 王晓敏, 等. 采用纳米银焊膏烧结互连技术的中高压 IGBT 模块及其性能表征[J]. 高电压技术, 2017, 43(10): 3307-3312.

MEI Yunhui, FENG Jingjing, WANG Xiaoming, et al. Medium and high voltage IGBT module using nanosilver paste sintering technology and its performance characterization[J]. High Voltage Engineering, 2017, 43(10): 3307-3312.

李聪成, 滕鹤松, 王玉林, 等. 银烧结技术在功率模块封装中的应用[J]. 电子工艺技术, 2016, 37(6): 311-315.

LI Congcheng, TENG Hesong, WANG Yulin, et al. Silver sintering technology for power module packaging application[J]. Electronics Process Technology, 2016, 37(6): 311-315.

张胜强. 功率器件的纳米银烧结工艺技术研究[D]. 廊坊: 北华航天工业学院, 2019.

ZHANG Shengqiang. Research on nanoscale-silver sintering technology of power device[D]. Langfang: North China Institude of Aerospace Engineering, 2019.

刘国友, 窦泽春, 罗海辉, 等. 高功率密度3 600 A/4 500 V压接型IGBT研制[J]. 中国电机工程学报, 2018, 38(16): 4855-4862.

LIU Guoyou, DOU Zechun, LUO Haihui, et al. Development of high power density 3 600 A/4 500 V press-pack IGBT[J]. Proceedings the CSEE, 2018, 38(16): 4855-4862.

刘国友, 黄建伟, 覃荣震, 等. 高压大电流(4 500 V/600 A)IGBT芯片研制[J]. 电工技术学报, 2021, 36(4): 810-819.

LIU Guoyou, HUANG Jianwei, QIN Rongzhen, et al. Development of large size IGBT chip with high power capacity of 4 500 V/600 A[J]. Transactions of China Electrotechnical Society, 2021, 36(4): 810-819.

戴小平, 吴义伯, 赵义敏, 等. 全烧结型SiC功率模块封装设计与研制[J]. 大功率变流技术, 2016(5): 36-40.

DAI Xiaoping, WU Yibo, ZHAO Yiming, et al. Packaging consideration and development for fully sintered SiC power module[J]. High Power Converter Technology, 2016(5): 36-40.

肖红秀, 窦泽春, 彭勇殿. 大功率压接式IGBT器件的热学设计与仿真[J]. 大功率变流技术, 2016(6): 24-30.

XIAO Hongxiu, DOU Zechun, PENG Yongdian, et al. Thermal design and simulation of high power press-pack IGBT module[J]. High Power Converter Technology, 2016(6): 24-30.

董国忠, 窦泽春, 刘国友, 等. 压接型IGBT的接触热阻模型优化与热特性研究[J]. 电力电子技术, 2018, 52(8): 34-37.

DONG Guozhong, DOU Zechun, LIU Guoyou, et al. Optimization of the thermal contact resistance model for studying thermal proerties of press pack IGBT[J]. Power Electronics, 2018, 52(8): 34-37.

DOU Zechun, DONG Guozhong, LIU Guoyou, et al. Study on accurate thermal modeling of press-pack IGBT module with asymmetric double-side cooling structure based on structure function curve by orthogonal experimental design[C]//IEEE. 2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS). Toulouse: IEEE, 2019: 1-9. DOI: 10.1109/PEDS44367.2019.8998885http://doi.org/10.1109/PEDS44367.2019.8998885.

韩立业, 孟昭亮. 引入压接技术的IGBT模块热仿真模型研究[J]. 微处理机, 2017, 38(1): 1-5.

HAN Liye, MENG Zhaoliang. Research on thermal simulation model of IGBT module with compression technology[J]. Microprocessors, 2017(1): 1-5.

刘国友, 窦泽春, 罗海辉, 等. 压接型IGBT均流设计[J]. 中国电力, 2019, 52(9): 20-29.

LIU Guoyou, DOU Zechun, LUO Haihui, et al. Current-sharing design of press-pack IGBT[J]. Electric Power, 2019, 52(9): 20-29.

邓二平, 张经纬, 李尧圣, 等. 焊接式IGBT模块与压接型IGBT器件可靠性差异分析[J]. 半导体技术, 2016, 41(11): 801-810.

DENG Erping, ZHANG Jingwei, LI Yaosheng, et al. Analysis of the reliability difference between IGBT modules and press-pack IGBTs[J]. Semiconductor Technology, 2016, 41(11): 801-810.

POLLER T, LUTZ J, D'ARCO S, et al. Determination of the thermal and electrical contact resistance in press-pack IGBTs[C]//IEEE. 2013 15th European Conference on Power Electronics and Applications (EPE). Lille: IEEE, 2013: 1-9. DOI: 10.1109/EPE.2013.6634440http://doi.org/10.1109/EPE.2013.6634440.

邓二平, 赵志斌, 张朋, 等. 压接型 IGBT 器件内部压力分布[J]. 电工技术学报, 2017, 32(6): 201-208.

DENG Erping, ZHAO Zhibin, ZHANG Peng, et al. Clamping force distribution within press pack IGBTs[J]. Transactions of China Electrotechnical Society, 2017, 32(6): 201-208.

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