Research on Silver Sintering Process and Wire Bonding Process of IGBT Module

Haoliang ZHANG; Jie FANG; Ninghua XU

doi:10.13890/j.issn.1000-128x.2021.05.019

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Research on Silver Sintering Process and Wire Bonding Process of IGBT Module

Process and Manufacturing Technology | 更新时间：2021-12-13

- Research on Silver Sintering Process and Wire Bonding Process of IGBT Module
- Electric Drive for Locomotives Issue 5, Pages: 123-127(2021)
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南　株洲　412001
  2.新型功率半导体器件国家重点实验室，湖南　株洲　412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.05.019
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Haoliang ZHANG, Jie FANG, Ninghua XU. Research on Silver Sintering Process and Wire Bonding Process of IGBT Module. [J]. Electric Drive for Locomotives (5):123-127(2021)
DOI：

Haoliang ZHANG, Jie FANG, Ninghua XU. Research on Silver Sintering Process and Wire Bonding Process of IGBT Module. [J]. Electric Drive for Locomotives (5):123-127(2021) DOI： 10.13890/j.issn.1000-128x.2021.05.019.

摘要

主要研究了应用于IGBT模块封装中的银烧结工艺和铜引线键合工艺，依据系列质量表征和评价方法，分别验证并优化了银烧结和铜引线键合的工艺参数，分析了衬板镀层对烧结层和铜线键合界面强度的影响，最后对试制的模块进行浪涌能力和功率循环寿命测试。结果显示，与普通模块相比，搭载银烧结和铜线键合技术的模块浪涌能力和功率循环寿命均有大幅的提升，并且银烧结和铜线键合界面未见明显的退化。

Abstract

The silver sintering process and copper wire bonding process used in IGBT module packaging were studied. Based on a series of quality characterization and evaluation methods, the process parameters of silver sintering and copper wire bonding were verified, optimized and analyzed. The influence of the surface finish coating on the strength of the sintered layer and the bonding interface of the copper wire was analyzed. Finally, the surge capacity and power cycle life of the trial-produced modules were tested. The results showed that the surge capacity and power cycle life of the modules with silver sintering and copper wire bonding technology were greatly improved compared with the ordinary modules, and the interface of silver sintering and copper wire bonding did not degrade obviously.

关键词

银烧结铜线键合可靠性功率循环

Keywords

silver sinteringcopper wire bondingreliabilitypower cycling

references

RUDZKI J, JENSEN L, POECHN M, et al. Quality evaluation for silver sintering layers in power electronic modules[C]//IEEE. 2012 7th International Conference on Integrated Power Electronics Systems (CIPS). Nuremberg: IEEE, 2012.

SIOW K S. Die-attach materials for high temperature applications in microelectronics packaging[M]. Cham: Springer, 2019.

张鹏哲. 小尺寸纳米银焊膏低温低压连接工艺及其机理研究[D]. 哈尔滨: 哈尔滨工业大学, 2016.

ZHANG Pengzhe. Research on process and mechanism of bonding using small nanosilver paste at low temperature and pressure[D]. Harbin: Harbin Institute of Technology, 2016.

王帅. 纳米银浆低温快速烧结机理及其接头性能研究[D]. 哈尔滨: 哈尔滨工业大学, 2014.

WANG Shuai. Rapid low temperature sintering mechanism of Ag nanoparticle paste and properties of the joint[D]. Harbin: Harbin Institute of Technology, 2014.

SYED-KHAJA A, HOERBER J, Gruber C, et al. A novel approach for thin-film ag-sintering process through aerosol jet printing in power electronics[C]//IEEE. 2015 European Microelectronics Packaging Conference (EMPC). Friedrichshafen: IEEE, 2015.

DUDEK R, DORING R, RZEPKA S, et al. Electro-thermo-mechanical analyses on silver sintered IGBT-module reliability in power cycling[C]//IEEE. 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems. Budapest: IEEE, 2015. DOI: 10.1109/EuroSimE.2015.7103139http://doi.org/10.1109/EuroSimE.2015.7103139.

CHEN C, CHOE C, ZHANG Z, et al. Effect of oxygen on Ag sintering technology with low temperature pressureless[C]//IEEE. 2018 19th International Conference on Electronic Packaging Technology (ICEPT). Shanghai: IEEE, 2018. DOI: 10.1109/ICEPT.2018.8480512http://doi.org/10.1109/ICEPT.2018.8480512.

TAN Y, LI X, CHEN G, et al. Three-dimensional visualization of the crack-growth behavior of nano-silver joints during shear creep[J]. Journal of Electronic Materials, 2015, 44(2): 761-769.

LEE B S, YOON J W. Die-attach for power devices using the Ag sintering process: Interfacial microstructure and mechanical strength[J]. Metals & Materials International, 2017, 23(5): 958-963. DOI: 10.1007/s12540-017-6908-1http://doi.org/10.1007/s12540-017-6908-1.

YOON J, BACK J, JUNG S. Effect of surface finish metallization on mechanical strength of Ag sintered joint[J]. Microelectronic Engineering, 2018, 198(5): 15-21. DOI: 10.1016/j.mee.2018.06.009http://doi.org/10.1016/j.mee.2018.06.009.

李元. 大功率 IGBT 芯片与 DBC 纳米银膏低温烧结接头组织与性能研究[D]. 天津: 天津大学, 2015.

LI Yuan. Study on microstructure and property of nanosilver paste joint of power IGBT and DBC by low temperature sintering[D]. Tianjin: Tianjin University, 2015.

BECKER M, HINRICH A, KLEIN A, et al. FEM based enhancement of system lifetime by improvement of the die top connection of power electronic semiconductors[C]//VDE. 10th International Conference on Integrated Power Electronics Systems. Stuttgart: VDE, 2018.

FABIAN B, THOMAS S, KALAJICA M, et al. Simulation based design of experiments of power cycling tests using die top system interconnect technology die topy system (DTS(r))[C]//VDE. PCIM Europe digital days. Nuremberg: VDE, 2021.

ÖZKOL E, BREM F, LIU C, et al. Enhanced power cycling performance of IGBT modules with a reinforced emitter contact[J]. Microelectronics and reliability, 2015, 55(6): 912-918. DOI: 10.1016/j.microrel.2015.03.013http://doi.org/10.1016/j.microrel.2015.03.013.

RUDZKI J, BECKEr M, EISELE R, et al. Power modules with increased power density and reliability using Cu wire bonds on sintered metal buffer layers[C]//VDE. 8th International Conference on Integrated Power Electronics Systems. Nuremberg: VDE, 2014.

MOHN F, LIU C, SCHUDERER J. Reliable interconnection technologies for high-temperature operation of SiC MOSFETs[C]//VDE. PCIM Europe. Nuremberg: VDE, 2017.

KANG Suk-Joong L. Sintering: densification, grain growth and microstructure[M]. Oxford: Elsevier Butterworth-Heinemann, 2005.

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