Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination

Rongbin ZHOU; Ping YANG; Maosen TANG; Junhan YE; Jun SHEN; Dong LIU; Liheng ZHU

doi:10.13890/j.issn.1000-128x.2021.05.009

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Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination

Chip Design and Manufacturing | 更新时间：2021-12-13

- Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination
- Electric Drive for Locomotives Issue 5, Pages: 58-63(2021)
- 作者机构：
  
  1.西南交通大学　电气工程学院，四川　成都　611756
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- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.05.009
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Rongbin ZHOU, Ping YANG, Maosen TANG, et al. Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination. [J]. Electric Drive for Locomotives (5):58-63(2021)
DOI：

Rongbin ZHOU, Ping YANG, Maosen TANG, et al. Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination. [J]. Electric Drive for Locomotives (5):58-63(2021) DOI： 10.13890/j.issn.1000-128x.2021.05.009.

摘要

击穿电压是IGBT的一个重要参数，而器件的击穿电压主要与终端结构有关，所以对终端结构的研究一直备受关注。文章设计了一种1 700 V的IGBT终端结构，采用场限环和场板相结合的终端技术，降低了器件表面电场峰值，提高了其击穿电压。通过仿真分析多组不同场板长度和氧化层厚度的终端结构，采用多项式拟合和多元回归分析击穿电压、表面电场分布与每个环上的场板长度和氧化层厚度的关系；在此基础上提前预测器件的击穿电压和表面电场分布，缩短终端设计时间；经过调整后，在366 μm的终端上仿真实现了1 927 V的击穿电压，终端效率达到了91.5%。该终端优化设计方法能够优化器件的表面电场分布，有效降低表面电场峰值，并提高终端效率。

Abstract

The breakdown voltage is an important parameter for IGBT, and the breakdown voltage of the device is mainly related to the termination structure, so the research on the termination structure has always attracted attention. The termination structure of 1 700 V IGBT was designed in this paper. The termination technique combining field limiting ring and field plate could reduce the peak electric field on the device surface and improve the breakdown voltage. The termination structures with different field plate length and oxide thickness were simulated. Polynomial fitting and multiple regression were used to analyze the relationship between breakdown voltage and surface electric field distribution, the length of field plate on each ring and oxide thickness. Based on this, the breakdown voltage and surface electric field of the device could be predicted, and the time spending on termination design could be shortened. After adjustment, the breakdown voltage has achieved 1 927 V with 366 μm length on termination structure, and efficiency of the termination is 91.5%. The peak of surface electric field was effectively reduced and the surface electric field distribution was optimized.

关键词

IGBT场限环场板击穿电压多元回归多项式拟合仿真

Keywords

IGBTfield limiting ringfield platebreakdown voltagemultiple regressionfit polynomialsimulation

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