Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

Liang ZENG; Cuixia WANG; Jiangfeng WU; Youling YU; Chengzhan LI; Xing DU

doi:10.13890/j.issn.1000-128x.2020.01.009

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Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET

Power Semiconductor Technology | 更新时间：2021-12-10

- Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET
- Electric Drive for Locomotives Issue 1, Pages: 45-48(2020)
- 作者机构：
  
  1.同济大学　电子与信息工程学院，上海　201804
  2.株洲中车时代半导体有限公司，湖南　株洲　412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2020.01.009
  CLC：
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Liang ZENG, Cuixia WANG, Jiangfeng WU, et al. Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET. [J]. Electric Drive for Locomotives (1):45-48(2020)
DOI：

Liang ZENG, Cuixia WANG, Jiangfeng WU, et al. Simulation and Analysis of Static Temperature Characteristics of 4H-SiC MOSFET. [J]. Electric Drive for Locomotives (1):45-48(2020) DOI： 10.13890/j.issn.1000-128x.2020.01.009.

摘要

SiC材料具有较大的禁带宽度、高临界电场、高载流子饱和漂移速度和高热导率等优良特性，能广泛应用在高温、高压、大功率等领域。为探究温度对4H-SiC MOSFET静态特性的影响规律，以指导高温高压环境下4H-SiC MOSFET的设计与制造，文章基于Silvaco平台对高压4H-SiC MOSFET器件进行了仿真建模，获得了其不同温度下的击穿电压、转移特性和输出特性，探究了温度对其击穿电压、阈值电压、饱和漏电流、导通电阻的影响规律。文章最终得到了300 K时击穿电压为4 450 V的SiC MOSFET器件元胞结构模型，验证了其静态特性及参数受温度影响较明显，该影响规律符合SiC MOSFET的静态特性理论。

Abstract

SiC materials have excellent properties such as large forbidden band width, high critical electric field, high carrier saturation drift speed and high thermal conductivity, making them widely used in high temperature, high voltage, high power and other fields. In order to investigate the influence of temperature on the static characteristics of 4H-SiC MOSFET to guide the design and manufacture of 4H-SiC MOSFET in high temperature and high voltage environment, a high-voltage 4H-SiC MOSFET device was simulated and modeled based on the Silvaco platform, and the breakdown voltage, transfer characteristics and output characteristics at different temperatures were obtained. The influence of temperature on its breakdown voltage, threshold voltage, saturated current and on-resistance was investigated. The cell structure model of SiC MOSFET device with a breakdown voltage of 4 450 V at 300 K was obtained. It was verified that the static characteristics and parameters were affected by temperature. The influence law was consistent with the static characteristic theory of SiC MOSFET.

关键词

4H-SiC MOSFET碳化硅静态特性温度特性器件仿真

Keywords

4H-SiC MOSFETsilicon carbidestatic characteristicstemperature characteristicsdevice simulation

references

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