Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module

Kangkang SUN; Yanping CHEN; Lanyuan XIN; Xiaonian WANG; Kaiqing YU; Changfeng HU

doi:10.13890/j.issn.1000-128x.2020.01.007

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Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module

Power Semiconductor Technology | 更新时间：2021-12-10

- Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module
- Electric Drive for Locomotives Issue 1, Pages: 34-37,48(2020)
- 作者机构：
  
  1.中车株洲所电气技术与材料工程研究院，湖南　株洲　412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2020.01.007
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Kangkang SUN, Yanping CHEN, Lanyuan XIN, et al. Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module. [J]. Electric Drive for Locomotives (1):34-37,48(2020)
DOI：

Kangkang SUN, Yanping CHEN, Lanyuan XIN, et al. Research on Switching Characteristics of 3 300 V Full SiC MOSFET Power Module. [J]. Electric Drive for Locomotives (1):34-37,48(2020) DOI： 10.13890/j.issn.1000-128x.2020.01.007.

摘要

为更好地发挥全SiC器件的开关速度快、损耗低等优势，研究了某款3 300 V全SiC MOSFET器件的开关特性。首先，通过理论分析阐述了开关变化过程，并给出了可量化的计算方法；其次，从驱动电阻、结温、回路杂散电感等方面探寻了开关特性变化的规律；最后，在样机上进行了验证。结果表明，文章中所述优化开关特性的方法对全SiC逆变器的工程应用有一定的指导意义。

Abstract

Depending on the advantages of SiC MOSFET with faster switching and lower on-state losses, the switching characteristics of a 3 300 V full SiC MOSFET device were studied to make better use of the device. Firstly, the switching processes of the SiC device were illustrated in theory, and the quantifiable method was provided; secondly, the effects of gate drive resistors, junction temperature and stray inductance on switching characteristics were investigated; finally, a prototype test was carried out. The results indicated that the switching characteristics optimizing method as discussed can provide application guidance to the full SiC invertors.

关键词

3 300 V全SiC MOSFET开关特性驱动电阻结温杂散电感

Keywords

3 300 V full SiC MOSFETswitching characteristicsgate drive resistorsjunction temperaturestray inductance

references

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