Research on High-power Full SiC Converter

ZHANG Qing; ZHANG Xiaoyong; RAO Peinan; SHI Hongliang; ZHAO Mingrui; ZHOU Shuai

doi:10.13890/j.issn.1000-128x.2018.06.013

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Research on High-power Full SiC Converter

更新时间：2021-12-13

- Research on High-power Full SiC Converter
- Electric Drive for Locomotives Issue 6, Pages: 63-66(2018)
- 作者机构：
  
  1. 株洲中车时代电气股份有限公司技术中心,湖南,株洲,412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2018.06.013
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ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, et al. Research on High-power Full SiC Converter. [J]. Electric Drive for Locomotives (6):63-66(2018)
DOI：

ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, et al. Research on High-power Full SiC Converter. [J]. Electric Drive for Locomotives (6):63-66(2018) DOI： 10.13890/j.issn.1000-128x.2018.06.013.

摘要

为了适应变流器产品高频化、高功率密度的发展趋势，研究了大功率全SiC MOSFET器件在变换器中的应用，讨论了全SiC MOSFET器件在应用中的杂散参数问题和桥臂串扰问题。通过双脉冲试验，重点研究了驱动电阻和吸收装置对大功率全SiC MOSFET器件关断尖峰电压的影响。结合实际产品研究了基于大功率SiC MOSFET器件在轨道交通Boost变换器中的应用。试验表明，相对于硅基 IGBT器件，采用SiC MOSFET器件能给变换器带来轻量化、工作频率、效率的全方位提升。

Abstract

In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied. The problem of stray parameters and bridge arms crosstalk in application of all-SiC-MOSFET devices was discussed. The effect of drive resistance and absorber on the closing peak of high-power all-SiC-MOSFET device was studied. The application of high-power SiC-MOSFET device in Boost converter was studied. The experiment showed that compared with the original Si-IGBT, the adoption of SiC-MOSFET device could bring an all-round improvement in light weight, working frequency and efficiency to the converter.

关键词

SiC器件SiC MOSFET杂散电感桥臂串扰振荡抑制高频化

Keywords

SiC deviceSiC-MOSFETstray inductancebridge arm crosstalkoscillation suppressionhigh-frequency

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