750 A/6 500 V High Power Density IGBT Module for Rail Transit Application

LIU Guoyou; LUO Haihui; LI Qunfeng; HUANG Jianwei; QIN Rongzhen

doi:10.13890/j.issn.1000-128x.2016.06.005

您当前的位置：

首页 >

文章列表页 >

750 A/6 500 V High Power Density IGBT Module for Rail Transit Application

更新时间：2021-12-13

- 750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
- Electric Drive for Locomotives Issue 6, Pages: 21-26(2016)
- 作者机构：
  
  1. 株洲中车时代电气股份有限公司新型功率半导体器件国家重点实验室,湖南,株洲,412001
  2. 中国铁路总公司,北京,100844
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2016.06.005
  CLC：
扫描看全文
LIU Guoyou, LUO Haihui, LI Qunfeng, et al. 750 A/6 500 V High Power Density IGBT Module for Rail Transit Application. [J]. Electric Drive for Locomotives (6):21-26(2016)
DOI：

LIU Guoyou, LUO Haihui, LI Qunfeng, et al. 750 A/6 500 V High Power Density IGBT Module for Rail Transit Application. [J]. Electric Drive for Locomotives (6):21-26(2016) DOI： 10.13890/j.issn.1000-128x.2016.06.005.

摘要

通态损耗及开关损耗的降低是高压绝缘栅双极晶体管（IGBT）设计与制造的关键。基于“U”形增强型双扩散金属氧化物半导体（DMOS+）元胞结构、增强型受控缓冲层（CPT+）及横向变掺杂集电极（VLDC）技术、横向变掺杂（VLD）终端结构等关键技术，研发了具有低通态损耗的6 500 V 平面栅 IGBT 芯片及其配套快恢复二极管（FRD）芯片。将IGBT 及FRD 芯片封装成750 A/6 500 V IGBT 模块并对其进行测试、试验，其动、静态特性与安全工作区（SOA）性能优良，满足我国高速动车组、大功率机车等轨道交通牵引的应用要求。

Abstract

Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of lateral doping of collector(VLDC) and variation of lateral doping(VLD) termination structure, low on state loss 6 500 V IGBT& fast recovery diode (FRD) chip-set and module(750 A rated current) were developed. The test results showed that the static and dynamic characteristics as well as safe operation area (SOA) performance were competitive with competitors’ products. The CRRC 750A/6500V IGBT module could satisfy the rail transit traction application requirements of China high-speed EMUs and high power locomotive, etc.

关键词

绝缘栅双极晶体管“U”形增强型双扩散金属氧化物半导体增强型受控缓冲层横向变掺杂集电极750 A/6 500 V IGBT 模块轨道交通

Keywords

IGBT"U"-shape DMOS+CPT+VLDC750 A/6 500 V IGBT modulerail transit

references

Views

下载量

CSCD

CNKI被引量

Alert me when the article has been cited

提交

Tools

Publicity Resources

Development and Characterization of High Power Density IGBT Module

Technical Features and Development Trend of High-voltageIGBT for Rail Transit Traction Application

Development status and suggestions of hydrail technology

Overview on current research status and development trends of hydrogen-powered rail transit

Study on architecture and control technology of multi-stack fuel cell system for rail transit

Related Author

No data

Related Institution

Power Semiconductor R&D Center, Zhuzhou CSR Times Electric Co.,Ltd., Lincoln, LN6 9LF, United Kingdom

CSR Zhuzhou Institue Co.,Ltd.

School of Traffic and Transportation, Beijing Jiaotong University

State Key Lab of Advanced Rail Autonomous Operation, Beijing Jiaotong University

Locomotive & Car Research Institute, China Academy of Railway Sciences Corporation Limited

⁰