Development and Characterization of High Power Density IGBT Module

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更新时间：2021-12-13

- Development and Characterization of High Power Density IGBT Module
- Electric Drive for Locomotives Issue 2, Pages: 6-11(2014)
- 作者机构：
  
  1. 株洲南车时代电气股份有限公司
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2014.02.030
  CLC：
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LIU Guo-you, QIN Rong-zhen, HUANG Jian-wei, et al. Development and Characterization of High Power Density IGBT Module. [J]. Electric Drive for Locomotives (2):6-11(2014)
DOI：

LIU Guo-you, QIN Rong-zhen, HUANG Jian-wei, et al. Development and Characterization of High Power Density IGBT Module. [J]. Electric Drive for Locomotives (2):6-11(2014) DOI： 10.13890/j.issn.1000-128x.2014.02.030.

基于现有标准DMOS设计技术，通过优化高压IGBT&FRD芯片及其模块结构，降低芯片功耗、模块寄生电感和模块热阻，改善模块散热，提高最高工作温度。研究开发了高功率密度1 500 A/3 300 V、1 200 A/4 500 V及750 A/6 500 V IGBT模块，满足轨道交通的应用要求。

Based on the standard DMOS technologies, the IGBT&FRD chip set and module structures were improved to realize lower

绝缘栅双极晶体管芯片模块高功率密度功耗散热特性分析轨道交通

IGBTchip setmodulehigh power densitypower consumptionheat dissipationcharacterizationrail transit

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