3 300 V IGBT / FRD Chipset Design and Development for Traction Application

LIU Guo-you; QIN Rong-zhen; Ian Deviny; HUANG Jian-wei

doi:10.13890/j.issn.1000-128x.2013.02.002

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3 300 V IGBT / FRD Chipset Design and Development for Traction Application

更新时间：2021-12-13

- 3 300 V IGBT / FRD Chipset Design and Development for Traction Application
- Electric Drive for Locomotives Issue 2, Pages: 5-8(2013)
- 作者机构：
  
  1. 株洲南车时代电气股份有限公司功率半导体研发中心,林肯,英国,LN6 3LF
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2013.02.002
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LIU Guo-you, QIN Rong-zhen, Ian Deviny, et al. 3 300 V IGBT / FRD Chipset Design and Development for Traction Application. [J]. Electric Drive for Locomotives (2):5-8(2013)
DOI：

LIU Guo-you, QIN Rong-zhen, Ian Deviny, et al. 3 300 V IGBT / FRD Chipset Design and Development for Traction Application. [J]. Electric Drive for Locomotives (2):5-8(2013) DOI： 10.13890/j.issn.1000-128x.2013.02.002.

摘要

针对轨道交通绝缘栅双极晶体管（IGBT）的应用特点，利用计算机仿真技术对终端结构进行优化，提高耐压特性；采用台面栅结构，提高开关速度；通过控制载流子注入效率，改善Vceon 与Eoff 的折中关系，降低芯片损耗；采用先进元胞设计技术，提高芯片短路能力，从而提高芯片可靠性；通过超低阳极掺杂控制阳极注入效率，免除局部寿命控制，降低FRD的反向漏电流。研究开发了3 300 V IGBT及其配套FRD芯片，满足轨道交通的应用要求。

Abstract

According to the IGBT characteristics and requirements for traction application, the simulation technique was used on the termination structure design to improve the blocking voltage. The terraced gate structure was developed to increase the switching speed, by adopting the carrier injection efficiency to realize a trade off between on state loss and turn off energy to reduce the total IGBT loss. The advanced cell structure design technique was adopted to optimize the short circuit capability to enhance the reliability. The ’super low P emitter’ was developed to get rid of the local lifetime control to reduce the FRD reverse leakage current. A 3 300 V IGBT/FRD had been developed, which could meet the requirements for traction application.

关键词

绝缘栅双极晶体管轨道交通终端结构台面栅注入效率元胞

Keywords

insulated gate bipolar transistor (IGBT)rail transittermination structureterraced gateinjection efficiencycell

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