The Uniformity and Its Impact on Reliability for 3 300 V IGBT Chip in Traction Application

LIU Guo-you; LUO Hai-hui; LIU Ke-an; HUANG Jian-wei; ZHANG Quan

doi:10.13890/j.issn.1000-128x.2013.02.001

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The Uniformity and Its Impact on Reliability for 3 300 V IGBT Chip in Traction Application

更新时间：2021-12-13

- The Uniformity and Its Impact on Reliability for 3 300 V IGBT Chip in Traction Application
- Electric Drive for Locomotives Issue 2, Pages: 1-4(2013)
- 作者机构：
  
  1. 株洲南车时代电气股份有限公司功率半导体研发中心
  2. 株洲南车时代电气股份有限公司技术中心
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2013.02.001
  CLC：
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LIU Guo-you, LUO Hai-hui, LIU Ke-an, et al. The Uniformity and Its Impact on Reliability for 3 300 V IGBT Chip in Traction Application. [J]. Electric Drive for Locomotives (2):1-4(2013)
DOI：

LIU Guo-you, LUO Hai-hui, LIU Ke-an, et al. The Uniformity and Its Impact on Reliability for 3 300 V IGBT Chip in Traction Application. [J]. Electric Drive for Locomotives (2):1-4(2013) DOI： 10.13890/j.issn.1000-128x.2013.02.001.

摘要

为满足轨道交通领域牵引用3 300 V IGBT 芯片应具有优良的栅极控制特性、较低的通态压降和较宽的安全工作区的要求，对3 300 V IGBT 芯片工艺进行了深入研究。在工艺控制和关键工艺改进方面采取措施，全面提升了牵引用3 300 V IGBT 芯片在栅极特性、电压阻断、导通特性和安全工作区等方面的表现，进而大幅度提高了芯片的可靠性。

Abstract

In order to meet the special requirements of traction application, 3 300 V IGBT was supposed to have the excellent gate control capability, the lower on-state voltage drop and the wider safe operating area, an intensive study had been made on chip processes of 3 300 V IGBT. Some measurements had been taken on the process control and the critical processes improvement, so as to greatly improve the characteristics of gate driving, voltage blocking, on-state performance, and safe operating area. Therefor, the reliability has been significantly enhanced.

关键词

高压IGBT轨道交通芯片工艺性能均匀性可靠性

Keywords

high-voltage IGBTrail trafficchip processesproperty uniformityreliability

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