A method for monitoring junction temperature of IGBT module based on turn-off voltage

LAN Weiyin; CUI Wei; CHEN Wenxuan; ZOU Yingqiao; LI Jiacheng; GE Xinglai

doi:10.13890/j.issn.1000-128X.2024.02.016

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A method for monitoring junction temperature of IGBT module based on turn-off voltage

Health and Diagnosis | 更新时间：2024-08-02

- A method for monitoring junction temperature of IGBT module based on turn-off voltage
- Electric Drive for Locomotives Issue 2, Pages: 132-139(2024)
- 作者机构：
  
  1.西南交通大学利兹学院，四川成都 610031
  2.西南交通大学电气工程学院，四川成都 610031
  3.西南交通大学物理科学与技术学院，四川成都 610031
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2024.02.016
  CLC： TN325⁺.2
- Published：10 March 2024，
  
  Received：10 December 2023，
  
  Revised：19 February 2024，
- 稿件说明：
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兰尉尹, 崔巍, 陈文轩, 等. 一种基于关断电压的IGBT模块结温监测方法[J]. 机车电传动, 2024(2): 132-139.

LAN Weiyin, CUI Wei, CHEN Wenxuan, et al. A method for monitoring junction temperature of IGBT module based on turn-off voltage[J]. Electric drive for locomotives,2024(2): 132-139.
兰尉尹, 崔巍, 陈文轩, 等. 一种基于关断电压的IGBT模块结温监测方法[J]. 机车电传动, 2024(2): 132-139. DOI：10.13890/j.issn.1000-128X.2024.02.016.

LAN Weiyin, CUI Wei, CHEN Wenxuan, et al. A method for monitoring junction temperature of IGBT module based on turn-off voltage[J]. Electric drive for locomotives,2024(2): 132-139. DOI：10.13890/j.issn.1000-128X.2024.02.016.

摘要

实现准确的结温监测对增强绝缘栅双极晶体管（IGBT）模块的可靠性、延长器件寿命至关重要。文章提出了一种基于关断电压的IGBT模块结温监测方法，具有不受负载电流干扰的特性。该方法首先验证了关断电压作为温敏电参数的合理性；其次，采用深度神经网络（DNN），排除关断电压对负载电流的依赖，达到不同工况下保持准确结温预测的目的；最后，通过单相脉宽调制（PWM）进行试验验证。结果显示，该结温监测方法误差在±5 ℃的范围内，这表明利用DNN优化结温监测是可行的。

Abstract

The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltages (TOV)

which highlights resistance to load currents. The study initially verified the rationality of using TOVs as a temperature-sensitive electrical parameter. The deep neural network (DNN) technology was subsequently employed to eradicate the dependence of TOVs on load currents

facilitating accurate junction temperature prediction under varying operational conditions. The proposed method was validated through a single-phase pulse width modulation (PWM) experiment. The findings reveal an error range of ±5 ℃ for this method

demonstrating the feasibility of optimizing junction temperature monitoring through DNN utilization.

关键词

绝缘栅双极晶体管结温监测深度神经网络温敏电参数关断电压

Keywords

insulated gate bipolar transistor (IGBT)junction temperature monitoringdeep neutral network (DNN)temperature-sensitive parameterturn-off voltage (TOV)

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