An online extraction method of junction temperature in IGBT devices with saturation voltage drop

WANG Zequn; TIAN Xiaoyu; SONG Zhiru; SONG Wensheng

doi:10.13890/j.issn.1000-128X.2023.05.019

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An online extraction method of junction temperature in IGBT devices with saturation voltage drop

Inspection & Testing Technology | 更新时间：2023-10-12

- An online extraction method of junction temperature in IGBT devices with saturation voltage drop
- Electric Drive for Locomotives Issue 5, Pages: 170-176(2023)
- 作者机构：
  
  1.西南交通大学电气工程学院，四川成都　　611756
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.05.019
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WANG Zequn, TIAN Xiaoyu, SONG Zhiru, et al. An online extraction method of junction temperature in IGBT devices with saturation voltage drop. [J]. Electric Drive for Locomotives (5):170-176(2023)
DOI：

WANG Zequn, TIAN Xiaoyu, SONG Zhiru, et al. An online extraction method of junction temperature in IGBT devices with saturation voltage drop. [J]. Electric Drive for Locomotives (5):170-176(2023) DOI： 10.13890/j.issn.1000-128X.2023.05.019.

摘要

绝缘栅双极型晶体管（Insulated Gate Bipolar Transistor, IGBT）模块的结温与工作性能、寿命及其可靠性密切相关，实现IGBT结温在线监测对电力电子系统可靠性提升与服役寿命的延长有着重要意义。文章基于IGBT的导通压降，分别构建了小电流和大电流饱和压降法结温监测模型和测量电路，实现IGBT结温的精确在线监测。首先，结合IGBT的工作原理，推导了导通压降的表达式；然后，根据小电流和大电流饱和压降的特点，分别建立了其结温监测模型；最后，设计了小电流恒流源电路和导通压降采样电路，并进行试验验证。试验结果表明：小电流饱和压降与IGBT结温呈线性关系，大电流饱和压降与结温呈非线性关系，并且二者实现结温监测的误差分别为1.29%和4.91%。

Abstract

The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems. Based on the conduction voltage drop of IGBT, this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature. Firstly, combined the operating principle of IGBT, the paper derived the expression for the conduction voltage drop. Then, according to the characteristics of low-current and high-current saturation voltage drop, the junction temperature monitoring models was established. Finally, it designed a low-current constant current source circuit and a conduction voltage drop sampling circuit, and conducted experiments to verify the models. The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature, while the high-current saturation voltage drop is nonlinearly related. The measurement errors for both methods are 1.29% and 4.91% respectively.

关键词

IGBT模块导通压降结温测量小电流下的饱和压降法大电流下的饱和压降法

Keywords

IGBT moduleconduction voltage dropjunction temperature measurementlow-current saturation voltage drop methodhigh-current saturation voltage drop method

references

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ZHAO Rui, YANG Kexin, TANG Tao, et al. Online monitoring method of IGBT device junction temperature based on a novel on-state voltage drop sampling circuit[J/OL]. Journal of power supply: 1-14. (2022-04-27) [2023-01-22]. http://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.htmlhttp://kns.cnki.net/kcms/detail/12.1420.TM.20220426.1744.006.html.

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