A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device

ZHANG Wenliang; YU Wei; YANG Fei; CUI Lei; LIAO Chenwei; LI Wenjiang

doi:10.13890/j.issn.1000-128X.2023.05.017

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A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device

Inspection & Testing Technology | 更新时间：2023-10-12

- A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device
- Electric Drive for Locomotives Issue 5, Pages: 152-161(2023)
- 作者机构：
  
  1.山东阅芯电子科技有限公司，山东威海　264315
  2.株洲中车时代半导体有限公司，湖南株洲　412001
  3.江苏芯长征微电子集团股份有限公司，江苏南京;211102
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.05.017
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ZHANG Wenliang, YU Wei, YANG Fei, et al. A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device. [J]. Electric Drive for Locomotives (5):152-161(2023)
DOI：

ZHANG Wenliang, YU Wei, YANG Fei, et al. A study on the influence of turn-on pulse width on double pulse testing for power semiconductor device. [J]. Electric Drive for Locomotives (5):152-161(2023) DOI： 10.13890/j.issn.1000-128X.2023.05.017.

摘要

为更好地开展功率半导体器件的双脉冲测试，文章系统性地研究了开通脉宽对功率半导体器件双脉冲测试的影响。通过理论分析结合仿真验证的方式分别研究了IGBT器件和MOSFET器件开关特性与开通脉宽之间的关系，研究发现，IGBT器件和MOSFET器件都会受到关断延时电流偏差和测量自热效应的影响：如果开通脉宽太小，关断延时电流偏差会影响双脉冲测试结果；如果开通脉宽太大，测量自热效应会显著影响双脉冲测试结果；同时，当开通脉宽太小时，IGBT器件的双脉冲测试结果还会额外受到非稳态开关效应影响，而非稳态开关效应会导致测试波形振荡严重，可能损坏器件，但MOSFET器件不会受到非稳态开关效应的影响。研究结果表明，IGBT器件和MOSFET器件都存在一个合理的开通脉宽（或负载电感电感值）范围，在该范围内器件的开关特性几乎不受开通脉宽的影响，而上限临界脉宽建议通过产品手册的热阻抗曲线进行估算，下限临界脉宽建议通过双脉冲实测的方式来确认。

Abstract

In order to better carry out double pulse testing for power semiconductor devices, the influence of the turn-on pulse width on DPT (double pulse testing) of power semiconductor devices is investigated systematically in the paper. The relationship between switching characteristics of IGBT and MOSFET devices and the turn-on pulse width was studied by theoretical analyzing and simulation verification. It was found that the current deviation caused by turn-off delay time and the self-heating effect caused by the testing can affect both IGBT and MOSFET devices. The current deviation caused by turn-off delay time can affect the DPT testing results if the turn-on pulse width is too small. While the self-heating effect caused by the testing can significantly affect the DPT testing results if the turn-on pulse width is too large. Besides, the non-stationary switching effect affects the DPT testing results when the turn-on pulse width is too small. The non-stationary switching effect can cause severe waveform oscillation which may even damage the IGBT, while MOSFET cannot be affected by the nonstationary switching effects. The research results indicate that both IGBT and MOSFET devices have reasonable ranges of turn-on pulse width (or inductance of the load inductor). Within this range, the switching characteristics of the devices are almost not affected by the turn-on pulse width. It is recommended that the upper limit of the turn-on pulse width can be estimated through the thermal impedance curve in the product manual, and the lower limit of the turn-on pulse width can be verified by the double pulse testing.

关键词

功率半导体器件双脉冲测试测量自热效应非稳态开关效应关断延时电流偏差

Keywords

power semiconductor devicedouble pulse testingself-heating effect caused by testingnonstationary switching effectcurrent deviation caused by turn-off delay time

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