A study on dynamic avalanche test of IGBT module

YU Wei; ZHENG Yu; YUAN Tao; REN Yadong

doi:10.13890/j.issn.1000-128X.2023.05.015

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A study on dynamic avalanche test of IGBT module

Inspection & Testing Technology | 更新时间：2023-10-12

- A study on dynamic avalanche test of IGBT module
- Electric Drive for Locomotives Issue 5, Pages: 139-144(2023)
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南株洲 412001
  2.功率半导体与集成技术全国重点实验室，湖南株洲;412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.05.015
  CLC：
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YU Wei, ZHENG Yu, YUAN Tao, et al. A study on dynamic avalanche test of IGBT module. [J]. Electric Drive for Locomotives (5):139-144(2023)
DOI：

YU Wei, ZHENG Yu, YUAN Tao, et al. A study on dynamic avalanche test of IGBT module. [J]. Electric Drive for Locomotives (5):139-144(2023) DOI： 10.13890/j.issn.1000-128X.2023.05.015.

摘要

在IGBT关断过程中，当芯片内部产生巨大的电场时会发生动态雪崩现象。文章通过设计试验方案并加以验证，探究了不同试验变量对IGBT动态雪崩以及雪崩耐量的影响。结果表明，电流和电感会对模块动态雪崩产生极大的影响，栅极电阻能够延缓模块内部动态雪崩的发生并提升模块雪崩耐量，母线电压也会对模块雪崩耐量的提升产生巨大影响，常温和高温下模块的雪崩耐量差距大。

Abstract

During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche and the avalanche tolerance of IGBT module. The results show that current and inductance have a great effect on the dynamic avalanche of the module. Gate resistance can delay the occurrence of dynamic avalanche inside the module and improve the avalanche resistance of the module. Bus voltage also has a huge effect on the improvement of module avalanche resistance. There is a large difference in avalanche resistance of the module between normal temperature and high temperature.

关键词

IGBT模块动态雪崩电流电感栅极电阻电压温度

Keywords

IGBT moduledynamic avalanchecurrentinductancegate resistancevoltagetemperature

references

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LU J, WANG L X, LU S J, et al. Avalanche behavior of power MOSFETs under different temperature conditions[J]. Journal of semiconductors, 2011, 32(1): 014001.

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