Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate

HU Yali; HE Kai; GE Xinglai

doi:10.13890/j.issn.1000-128X.2023.05.012

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Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate

Packaging Technology | 更新时间：2023-10-12

- Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate
- Electric Drive for Locomotives Issue 5, Pages: 113-118(2023)
- 作者机构：
  
  1.西南交通大学电气工程学院，四川成都　　610031
  2.株洲中车时代电气股份有限公司，湖南株洲;412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.05.012
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HU Yali, HE Kai, GE Xinglai. Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate. [J]. Electric Drive for Locomotives (5):113-118(2023)
DOI：

HU Yali, HE Kai, GE Xinglai. Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate. [J]. Electric Drive for Locomotives (5):113-118(2023) DOI： 10.13890/j.issn.1000-128X.2023.05.012.

摘要

新兴的无基板模块广泛应用于新能源领域，其对热界面材料的涂敷要求较高，但相关的研究目前较少。文章针对热界面材料（Thermal Interface Material，TIM）层空洞率不同时，对有、无基板IGBT模块上的芯片结温变化规律进行了仿真研究。通过建立精确数值模型进行稳态热仿真试验，根据试验结果定量分析有、无基板模块上的芯片结温受TIM空洞影响程度。结果表明，相比无基板模块，有基板模块上的芯片结温低，试验芯片分别低8.578 K和9.544 K左右；在TIM层空洞率上升时，对于结温升高速率，无基板模块比有基板模块大，无基板模块的大芯片和小芯片的升温速率分别约为对应的有基板模块大、小芯片的32.190倍和240.875倍；大芯片结温上升速率均比小芯片低，对于有、无基板的模块而言，前者分别约为后者的23倍和3倍。无基板模块对TIM层状态更敏感，要求更高。

Abstract

The emerging modules without baseplate are widely used in the field of new energy. They have high requirements for the coating of thermal interface material, but there are few related studies. In this paper, simulation research was conducted for the changing rule of the junction temperature of chips on IGBT modules with and without baseplate when the void ratio of the thermal interface material (TIM) is changing. A precise numerical model was established to carry out steady-state thermal simulation experiment. According to the results, quantitative analysis was conducted on the degree to which the chip junction temperature is affected by TIM voids on modules with and without baseplate. The results show that the chip junction temperature of the module with baseplate is lower than that of the module without baseplate, and the chip junction temperature is about 8.578 K and 9.544 K lower, respectively. When the void ratio of TIM layer increases, the junction temperature rise rate of the module without baseplate is greater than that of the module with baseplate, and the temperature rise rate of the large chip and the small chip of the module without baseplate is about 32.190 times and 240.875 times respectively that of the module with baseplate. The junction temperature rise rate of large chip is lower than that of small chip, which is about 23 times and 3 times, on modules with baseplate and without baseplate respectively. Modules without baseplate are more sensitive to the state of the TIM layer and have higher requirements.

关键词

无基板功率器件有限元稳态热仿真热界面材料空洞率结温

Keywords

power device without baseplatefinite elementsteady-state thermal simulationthermal interface materialvoid ratiojunction temperature

references

福尔克, 郝康普. IGBT模块: 技术、驱动和应用[M]. 韩金刚, 译. 北京: 机械工业出版社, 2016: 28-40.

VOLKE A, HORNKAMP M. IGBT modules: technologies, driver and application[M]. translated by HAN Jingang. Beijing: China Machine Press, 2016: 28-40.

龚金水, 陆虎瑜, 江云, 等. 光伏发电系统正弦波高效率逆变器电路分析[J]. 电工电能新技术, 1991(2): 6-12.

GONG Jinshui, LU Huyu, JIANG Yun, et al. The circuit analysis of sinewave high efficiency inverter for photovoltaic systems[J]. Advanced technology of electrical engineering and energy, 1991(2): 6-12.

王磊, 周明超, 郭梦雪, 等. 基于任务剖面的牵引变流器IGBT模块焊料层疲劳应力与剩余使用寿命的映射方法[J]. 中国电机工程学报, 2022, 42(增刊1): 269-278.

WANG Lei, ZHOU Mingchao, GUO Mengxue, et al. A mapping method of solder layer fatigue stress and remaining useful life for IGBT module in a traction converter based on the mission-profile[J]. Proceedings of the CSEE, 2022, 42(Suppl 1): 269-278.

李晓平, 刘江, 赵哿, 等. 逆导型IGBT的发展及其在智能电网中的应用[J]. 智能电网, 2017, 5(1): 1-8.

LI Xiaoping, LIU Jiang, ZHAO Ge, et al. Development and application of reverse conducting-IGBT in smart grid[J]. Smart grid, 2017, 5(1): 1-8.

周星宏. 航空中频地面电源控制策略的研究[D]. 成都: 西华大学, 2021.

ZHOU Xinghong. Research on control strategy of aviation medium frequency ground power supply[D]. Chengdu: Xihua University, 2021.

俞朝春. 某型雷达发射机故障预测与健康管理关键技术研究[D]. 镇江: 江苏科技大学, 2022.

YU Chaochun. Research on key technologies of prognostics and health management for a radar transmitter[D]. Zhenjiang: Jiangsu University of Science and Technology, 2022.

HUANG Hui, MAWBY P A. A lifetime estimation technique for voltage source inverters[J]. IEEE transactions on power electronics, 2013, 28(8): 4113-4119.

ZHANG Xiaotong, CHENG Zhuolin, LYU Chunlin, et al. A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules[J]. Energy reports, 2023, 9(Suppl 10): 1073-1080.

刘宾礼, 罗毅飞, 肖飞, 等. 基于传热动力学作用特征的IGBT结温预测数学模型[J]. 电工技术学报, 2017, 32(12): 79-87.

LIU Binli, LUO Yifei, XIAO Fei, et al. Junction temperature prediction mathematical model of IGBT based on the characteristics of thermal dynamics[J]. Transactions of China electrotechnical society, 2017, 32(12): 79-87.

NELSON J J, VENKATARAMANAN G, EL-REFAIE A M. Fast thermal profiling of power semiconductor devices using Fourier techniques[J]. IEEE transactions on industrial electronics, 2006, 53(2): 521-529.

刘黎, 李康, 黄萌, 等. 基于电压电流特性曲线的MMC子模块IGBT通态损耗在线计算方法[J]. 电力系统保护与控制, 2022, 50(23): 19-27.

LIU Li, LI Kang, HUANG Meng, et al. On-line calculation method of an IGBT on-state loss of an MMC sub-module based on a voltage and current characteristic curve[J]. Power system protection and control, 2022, 50(23): 19-27.

CAO Han, NING Puqi, WEN Xuhui, et al. Practical SPICE model for IGBT and PiN diode based on finite differential method[J]. Journal of power electronics, 2019, 19(6): 1591-1600.

姚芳, 王少杰, 陈盛华, 等. IGBT功率模块瞬态热阻抗测量方法研究[J]. 电力电子技术, 2016, 50(9): 103-105.

YAO Fang, WANG Shaojie, CHEN Shenghua, et al. Research on transient thermal impedance measurement method of IGBT power module[J]. Power electronics, 2016, 50(9): 103-105.

贾英杰, 肖飞, 罗毅飞, 等. 基于场路耦合的大功率IGBT多速率电热联合仿真方法[J]. 电工技术学报, 2020, 35(9): 1952-1961.

JIA Yingjie, XIAO Fei, LUO Yifei, et al. Multi-rate electro-thermal simulation method for high power IGBT based on field-circuit coupling[J]. Transactions of China electrotechnical society, 2020, 35(9): 1952-1961.

张艺驰. 基于傅里叶变换的IGBT结温快速计算方法研究[D]. 成都: 西南交通大学, 2021.

ZHANG Yichi. Fast calculation method research for IGBT junction temperature based on Fourier transform[D]. Chengdu: Southwest Jiaotong University, 2021.

杨世铭, 陶文铨. 传热学[M]. 北京: 高等教育出版社, 2006: 41-43.

YANG Shiming, TAO Wenquan. Heat transfer[M]. Beijing: Higher Education Press, 2006: 41-43.

Infineon Technologies AG. F3L400R10W3S7_B11[Z]. München: Infineon Technologies AG, 2020.

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