A study on matching of Si<sub>3</sub>N<sub>4</sub> substrate for SiC module based on stress difference improvement

HUANG Shidong; WANG Gufeng; SHEN Yicong; CHANG Guiqin; LIU Chengchen

doi:10.13890/j.issn.1000-128X.2023.05.011

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A study on matching of Si₃N₄ substrate for SiC module based on stress difference improvement

Packaging Technology | 更新时间：2023-10-12

- A study on matching of Si₃N₄ substrate for SiC module based on stress difference improvement
- Electric Drive for Locomotives Issue 5, Pages: 107-112(2023)
- 作者机构：
  
  1.浙江德汇电子陶瓷有限公司，浙江嘉兴 314000
  2.株洲中车时代半导体有限公司，湖南株洲;412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.05.011
  CLC：
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HUANG Shidong, WANG Gufeng, SHEN Yicong, et al. A study on matching of Si₃N₄ substrate for SiC module based on stress difference improvement. [J]. Electric Drive for Locomotives (5):107-112(2023)
DOI：

HUANG Shidong, WANG Gufeng, SHEN Yicong, et al. A study on matching of Si₃N₄ substrate for SiC module based on stress difference improvement. [J]. Electric Drive for Locomotives (5):107-112(2023) DOI： 10.13890/j.issn.1000-128X.2023.05.011.

摘要

功率半导体器件的快速发展，特别是SiC功率模块的广泛应用对模块中的陶瓷覆铜衬板提出了更高要求，模块封装中陶瓷覆铜衬板的翘曲将影响其可靠性。文章研究了陶瓷覆铜衬板的应力状态以及应力与衬板翘曲的关系，并提供了包括延长冷却时间、降低峰值温度、调整铜体积比在内的减小翘曲度的改善方案，使衬板与SiC模块匹配性得到提升，从而提升了模块可靠性。

Abstract

The rapid development of power semiconductor devices, especially the widespread application of SiC power modules, has put forward higher requirements for ceramic copper-coated substrate in modules, and the warpage of the substrate in module packaging will affect its reliability. The article studied the stress state of the substrate and the relationship between the stress and the warpage, and provided improvement plans to reduce the warpage, including extending cooling time, reducing peak temperature, and adjusting copper volume ratio to improve the matching between the substrate and SiC module, thereby enhancing module reliability.

关键词

SiC模块陶瓷覆铜衬板应力翘曲度可靠性

Keywords

SiC power moduleceramic copper-coated substratestresswarpagereliability

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A study on matching of Si3N4 substrate for SiC module based on stress difference improvement

DOI：10.13890/j.issn.1000-128X.2023.05.011

摘要

Abstract

关键词

Keywords

references

A study on matching of Si₃N₄ substrate for SiC module based on stress difference improvement