Research on advanced interconnection processes for SiC power device

DU Longchun; HE Yong; LIU Hongwei; LIU Xiaopeng

doi:10.13890/j.issn.1000-128X.2023.04.021

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Research on advanced interconnection processes for SiC power device

High-power Devices | 更新时间：2024-08-02

- Research on advanced interconnection processes for SiC power device
- Electric Drive for Locomotives Issue 4, Pages: 152-157(2023)
- 作者机构：
  
  1.湖南国芯半导体科技有限公司，湖南株洲　　412001
  2.湖南省功率半导体创新中心，湖南株洲;412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.04.021
  CLC： TN304.2⁺4;TN605
- Published：10 July 2023，
  
  Received：28 June 2023，
- 稿件说明：
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杜隆纯, 何勇, 刘洪伟, 等. SiC功率器件先进互连工艺研究[J]. 机车电传动, 2023(4): 152-157.

DU Longchun, HE Yong, LIU Hongwei, et al. Research on advanced interconnection processes for SiC power device[J]. Electric drive for locomotives,2023(4): 152-157.
杜隆纯, 何勇, 刘洪伟, 等. SiC功率器件先进互连工艺研究[J]. 机车电传动, 2023(4): 152-157. DOI： 10.13890/j.issn.1000-128X.2023.04.021.

DU Longchun, HE Yong, LIU Hongwei, et al. Research on advanced interconnection processes for SiC power device[J]. Electric drive for locomotives,2023(4): 152-157. DOI： 10.13890/j.issn.1000-128X.2023.04.021.

摘要

针对SiC功率器件封装的高性能和高可靠性要求，文章研究了芯片双面银烧结技术与粗铜线超声键合技术的高可靠性先进互连工艺。通过系列质量评估与测试方法对比分析了不同烧结工艺对芯片双面银烧结层和芯片剪切强度的影响，分析了衬板表面材料对铜线键合强度的影响，最后对试制样品进行温度冲击测试，讨论了温度冲击对银烧结显微组织及其剪切强度的影响，以及对铜线键合强度的影响。试验结果表明：一次烧结工艺与分次烧结工艺的芯片剪切强度均达到了工业生产要求的标准值，但分次烧结工艺的银烧结效果在组织结构和芯片剪切强度上都要优于一次烧结工艺；温度冲击测试后烧结银显微组织的烧结颈增大，孔隙增大，并且2种烧结工艺的芯片剪切强度都明显增大。衬板材质对铜线超声键合强度有很大影响，在裸铜活性金属钎焊（Active Metal Braze，AMB）上的键合性能表现出更好的力学性能，温度冲击后裸铜AMB上的键合点力学性能会退化，但镀银AMB上的力学性能反而会增强；结合拉力测试后第二键合点的断裂模式，温度冲击使裸铜AMB上键合点的断裂模式从100%颈部断裂转向焊点脱落，而使镀银AMB上的焊点脱落逐渐减少。

Abstract

To meet the high requirements for performance and reliability in packaging silicon carbide (SiC) power devices

this paper focused on studying relevant advanced interconnection processes

specifically double-side silver sintering technology for chip and thick copper wire ultrasonic bonding technology. Through a series of quality evaluations and tests

a comparative analysis was conducted regarding the influence of different sintering processes on double-side silver sintering layers for chip and chip shear strength

and the effect of lining plate surface materials on copper wire bonding strength. In addition

temperature shock tests were conducted on the samples

to investigate the influence of temperature shock on silver sintering in terms of microstructure and shear strength

as well as the copper wire bonding strength. The experimental results show that both the single-sintering process and multiple-sintering process achieve chip shear strength standard values that meet industrial production requirements

but the multiple-sintering process exhibits superior silver sintering effects in terms of structure and chip shear strength. Under temperature shock conditions

the sintering silver displays expanded necks and pores in the microstructure

and both sintering processes produce a significant increase in chip shear strength. Moreover

the choice of lining plate material significantly influences the copper wire ultrasonic bonding strength. Although bonds on bare copper active metal braze (AMB) exhibit better mechanical properties compared to silver-plated AMB

the former deteriorates in mechanical properties under the effect of temperature shock

while the mechanical properties of the latter are enhanced. Taking into account the fracture modes shown at the second bond after the pull test

temperature shock contributes to shifting the fracture mode of bonds on bare copper AMB from 100% neck fracture to welding spot drop

while a gradual decrease in welding spot drop for silver-plated AMB.

关键词

碳化硅功率器件芯片双面银烧结铜线键合

Keywords

silicon carbide power devicedouble-side silver sintering for chipcooper wire bonding

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