A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate

WU Weizhen; YANG Fan; HU Bo; LI Mingyu

doi:10.13890/j.issn.1000-128X.2022.06.021

您当前的位置：

首页 >

文章列表页 >

A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate

High-power Devices | 更新时间：2024-08-02

- A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate
- Electric drive for locomotives Issue 6, Pages: 149-155(2022)
- 作者机构：
  
  1.深圳芯源新材料有限公司，广东深圳 518133
  2.哈尔滨工业大学（深圳）索维奇智能新材料实验室，广东深圳;518055
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2022.06.021
  CLC： TN305;TG425
- Published：10 November 2022，
  
  Received：15 July 2021，
  
  Revised：25 October 2022，
- 稿件说明：
扫描看全文
WU Weizhen, YANG Fan, HU Bo, et al. A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate. [J]. Electric drive for locomotives (6):149-155(2022)
DOI：

WU Weizhen, YANG Fan, HU Bo, et al. A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate. [J]. Electric drive for locomotives (6):149-155(2022) DOI： 10.13890/j.issn.1000-128X.2022.06.021.

摘要

使用烧结银膏作为封装互连材料可以充分发挥宽禁带半导体在器件应用上的优势，并提高器件的可靠性。通过对无压银膏烧结焊点的微观组织、力学性能和失效模式进行分析，系统地研究了无压银膏烧结焊点在不同温度下的组织演变规律，获得了烧结温度、基板金属化类型对烧结银连接性能和可靠性的影响。当烧结温度达到250 ℃，银界面无压烧结焊点的剪切强度达到60 MPa以上；金界面无压烧结焊点在200 ℃时剪切强度最高，升高温度会导致烧结银与金界面原子扩散过快，界面结合强度降低；铜界面无压烧结焊点由于氧化严重，界面出现裂纹，剪切强度远低于金、银界面焊点的剪切强度。

Abstract

Using sintering silver paste as an interconnect material for packaging can give full play to the advantages of wide bandgap semiconductors in device applications and improve the reliability of devices. By analyzing the microstructure

mechanical properties and failure modes of the pressureless silver paste sintering joints

the microstructure evolution rule of the pressureless silver paste sintering joints at different temperatures was systematically researched. The influence of sintering temperature and substrate metallization type on the connection performance and reliability of sintered silver was obtained. When the sintering temperature was 250 ℃

the shear strength of the pressureless sintering joints at the silver interface reached more than 60 MPa. The shear strength of the pressureless sintering joints at the gold interface was the highest at 200 ℃. Increasing the temperature would cause the atoms at the interface of sintered silver and gold to diffuse too fast

resulting in a decrease in the bonding strength of the interface. Due to the severe oxidation and the cracks at the interface

the shear strength of pressureless sintering joints at the copper interface was much lower than that of joints at silver and gold interfaces.

关键词

烧结银膏无压烧结剪切强度表面金属化断裂模式

Keywords

sintering silver pastepressureless sinteringshear strengthsurface metallizationfracture mode

references

YANG Jia, ZHANG Xunye, MA Guanglu, et al. Microstructural evolution and mechanical property of a SiCf/SiC composite/Ni-based superalloy joint brazed with an Au-Cu-Ti filler[J]. Journal of the European Ceramic Society, 2021, 41(4): 2312-2322.

LIU Wei, AN Rong, WANG Chunqing, et al. Recent progress in rapid sintering of nanosilver for electronics applications[J]. Micromachines, 2018, 9(7): 346.

CHEN Hongtao, HU Tianqi, LI Mingyu, et al. Cu@Sn core-shell structure powder preform for high-temperature applications based on transient liquid phase bonding[J]. IEEE Transactions on Power Electronics, 2017, 32(1): 441-451.

LI Mingyu, XIAO Yong, ZHANG Zhihao, et al. Bimodal sintered silver nanoparticle paste with ultrahigh thermal conductivity and shear strength for high temperature thermal interface material applications[J]. ACS Applied Materials & Interfaces, 2015, 7(17): 9157-9168.

PAKNEJAD S A, MANNAN S H. Review of silver nanoparticle based die attach materials for high power/temperature applications[J]. Microelectronics Reliability, 2017, 70: 1-11.

HONG W S, KIM M S, OH C, et al. Pressureless silver sintering of silicon-carbide power modules for electric vehicles[J]. JOM, 2020, 72(2): 889-897.

CASTRO R H R, VAN BENTHEM K. Sintering: mechanisms of convention nanodensification and field assisted processes[M]. Berlin: Springer, 2013: 8-16.

WANG Xiaomin, MEI Yunhui, LI Xin, et al. Pressureless sintering of nanosilver paste as die attachment on substrates with ENIG finish for semiconductor applications[J]. Journal of Alloys and Compounds, 2019, 777: 578-585.

HU Yaozhi, SHARANGPANI R, TAY S P. In situ rapid thermal oxidation and reduction of copper thin films and their applications in ultralarge scale integration[J]. Journal of the Electrochemical Society, 2001, 148(12): G669.

Views

下载量

CSCD

CNKI被引量

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰