1.天津中环领先材料技术有限公司,天津 300384
由佰玲(1977—),女,教授级高级工程师,研究方向为半导体硅片工艺技术和硅单晶理化性能分析技术;E-mail: youbailing@zhlxsemicon.com
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由佰玲, 孙希凯, 邓春星, 等. 高光泽度的硅酸腐片制备研究[J]. 机车电传动, 2021,(5):138-141.
Bailing YOU, Xikai SUN, Chunxing DENG, et al. Research on Acid Etching Wafer With the High Glossiness[J]. Electric Drive for Locomotives, 2021,(5):138-141.
由佰玲, 孙希凯, 邓春星, 等. 高光泽度的硅酸腐片制备研究[J]. 机车电传动, 2021,(5):138-141. DOI: 10.13890/j.issn.1000-128x.2021.05.022.
Bailing YOU, Xikai SUN, Chunxing DENG, et al. Research on Acid Etching Wafer With the High Glossiness[J]. Electric Drive for Locomotives, 2021,(5):138-141. DOI: 10.13890/j.issn.1000-128x.2021.05.022.
为提高酸腐片光泽度和实现稳定量产,通过优化硅单晶片加工流程,将双面研磨硅片进行旋转磨削加工,然后对该硅片进行酸性腐蚀;制备的酸腐片表面光泽度达到360 Gu以上(反射率大于98%),腐蚀液的寿命延长到50 000片;该制备技术使得酸腐片的应用领域得到拓展,并降低生产成本和提高生产效率。
In order to improve the glossiness of acid etched wafer and achieve stable mass production, by optimizing process of producing silicon wafer, rotate and grind the wafer to be double-sided grinding wafer, then acid etch the wafer. The glossiness of acid etched wafer reached more than 360 Gu (re fl ectivity greater than 98%) and the service life of etchant was extended to 50 000 wafers.The application field of acid etching wafer was expanded, the processing cost of products was reduced and the processing efficiency of products was improved.
酸腐片旋转磨削移除量损伤层反射率
acid etching waferrotating grindingremovaldamage layerre fl ectivity
樊丽梅, 文九巴, 赵胜利, 等. 化学蚀刻单晶硅及其表面形貌研究[J]. 表面技术, 2007, 36(1): 19-21.
FAN Limei, WEN Jiuba, ZHAO ShengLi, et al. Chemical etching on single-crystalline silicon slice and its surface morphology[J]. Surface Technology, 2007, 36(1): 19-21.
胡晓珍, 李伟. 硅晶片抛光加工工艺的试验研究[J]. 新技术新工艺, 2008(4): 41-43.
HU Xiaozhen, LI Wei. Experimental study on polishing process of silicon wafer[J]. New Technology & New Process, 2008(4): 41-43.
谢书银. 硅片化学腐蚀及其在电力半导体器件中的应用[J]. 电力电子技术, 1999, 33(3): 48-50.
XIE Shuyin. The chemical corrosion for silicon wafer and its application in power semiconductor devices[J]. Power Electronics, 1999, 33(3): 48-50.
由佰玲, 孙希凯, 冯硕, 等. 酸腐蚀硅片光泽度研究[C]//天津市电视技术研究会. 天津市电视技术研究会2013年年会论文集. 天津: 天津市电子工业协会, 2013: 197-199.
YOU Bailing, SUN Xikai, FENG Shuo, et al. The research on the glossiness of acid etching wafer[C]//Tianjin TV Technology Research Association. Proceeding of 2013 Annual Meeting of Tianjin TV Technology Research Association. Tianjin: Electrical Industries Association of Tianjin, 2013: 197-199.
康仁科, 田业冰, 郭东明, 等. 大直径硅片超精密磨削技术的研究和应用现状[J]. 金刚石与磨料磨具工程, 2003(4): 13-18.
KANG Renke, TIAN Yebing, GUO Dongming, et al. Present status of research and application in ultra-precision grinding technology of large-scale silicon wafers[J]. Diamond & Abrasives Engineering, 2003(4): 13-18.
林彬. 单晶硅片超精密磨削表面损伤层深度解析预测[D]. 大连: 大连理工大学, 2018.
LIN Bin. Analytical prediction of damage layer depth of ground surface of monocrystalline silicon wafers induced by ultra-fine grinding[D]. Dalian: Dalian University of Technology, 2018.
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