基于沟道状态的SiC MOSFET器件浪涌能力研究
Study on Surge Capacity of SiC MOSFET Based on Channel State
- 机车电传动 2021年第5期 页码：64-70
- 作者机构：
1.华北电力大学 新能源电力系统国家重点实验室，北京 102206
2.华电（烟台）功率半导体技术研究院有限公司，山东 烟台 264006
3.华北电力大学 数理学院，北京 102206
- 作者简介：
邓二平（1989—），男，博士，讲师，研究方向为高压大功率IGBT器件封装及可靠性，包括失效机理、测试技术和方法、测试装备研制等；E-mail: dengerpinghit@163.com
- 基金信息：国家自然科学基金资助项目(52007061)
DOI：10.13890/j.issn.1000-128x.2021.05.010
中图分类号：
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孟鹤立, 邓二平, 王文杰, 等. 基于沟道状态的SiC MOSFET器件浪涌能力研究[J]. 机车电传动, 2021,(5):64-70.
Heli MENG, Erping DENG, Wenjie WANG, et al. Study on Surge Capacity of SiC MOSFET Based on Channel State[J]. Electric Drive for Locomotives, 2021,(5):64-70.
孟鹤立, 邓二平, 王文杰, 等. 基于沟道状态的SiC MOSFET器件浪涌能力研究[J]. 机车电传动, 2021,(5):64-70. DOI： 10.13890/j.issn.1000-128x.2021.05.010.
Heli MENG, Erping DENG, Wenjie WANG, et al. Study on Surge Capacity of SiC MOSFET Based on Channel State[J]. Electric Drive for Locomotives, 2021,(5):64-70. DOI： 10.13890/j.issn.1000-128x.2021.05.010.
摘要
得益于技术的进步，SiC MOSFET器件中的体二极管可靠性有极大的提升，并在部分领域和模块中取代了续流二极管。文章基于浪涌电流试验，对不同沟道状态下SiC MOSFET器件浪涌能力进行了深入研究。首先，搭建了浪涌电流试验平台，对CREE和Infineon两家公司的器件进行了浪涌电流试验；然后，测量和对比了试验前后器件的阈值电压、导通电阻、体二极管电压和漏极漏电流等特性的变化；最后，通过超声波扫描显微镜观察了器件失效前后内部结构的变化，并分析了器件的失效原因。试验结果表明，SiC MOSFET器件在浪涌电流冲击下，栅极可靠性和金属层可靠性共同决定了器件的可靠性：一方面，栅极可靠性高的器件，沟道导通有利于降低最高结温，提高浪涌电流下的可靠性；另一方面，栅极可靠性低的器件，沟道的关闭有利于保护栅极。
Abstract
The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of SiC MOSFET body diode under different channel states were deeply studied in this paper. First, a surge current test platform was built and the devices of CREE and Infineon were tested. Then, the changes of threshold voltage, on-resistance,body diode voltage, and drain leakage current before and after the surge current test were measured and compared. After the device failed, the change of its internal structure was observed by scanning acoustic microscope, and the failure reason of the device was analyzed. Test results showed that the reliability of the gate and the metal layer together determine the reliability of the device under the surge current in SiC MOSFET devices. On the one hand, channel conduction helped to reduce the maximum junction temperature and improve the reliability under surge current for devices with high gate reliability, on the other hand, the channel closing helped to protect the gate of devices with low gate reliability.
关键词
SiC MOSFET沟道金属层体二极管浪涌电流栅极可靠性
Keywords
SiC MOSFETchannelmetal layerbody diodesurge currentgate reliability
references
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