低米勒电容超结MOSFET开关过程及反向恢复性能仿真研究

唐茂森; 刘东; 沈俊; 葛兴来; 周荣斌; 叶峻涵

doi:10.13890/j.issn.1000-128x.2021.05.006

您当前的位置：

首页 >

文章列表页 >

低米勒电容超结MOSFET开关过程及反向恢复性能仿真研究

芯片设计与制造 | 更新时间：2021-12-13

- 低米勒电容超结MOSFET开关过程及反向恢复性能仿真研究
- Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET
- 机车电传动 2021年第5期页码：38-46
- 作者机构：
  
  1.西南交通大学　电气工程学院，四川　成都　611756
- 作者简介：
  
  刘东（1988—），男，博士，讲师，研究方向为电力电子与电力传动；E-mail: 1164523854@qq.com
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.05.006
  中图分类号：
扫描看全文
唐茂森, 刘东, 沈俊, 等. 低米勒电容超结MOSFET开关过程及反向恢复性能仿真研究[J]. 机车电传动, 2021,(5):38-46.

Maosen TANG, Dong LIU, Jun SHEN, et al. Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET[J]. Electric Drive for Locomotives, 2021,(5):38-46.
唐茂森, 刘东, 沈俊, 等. 低米勒电容超结MOSFET开关过程及反向恢复性能仿真研究[J]. 机车电传动, 2021,(5):38-46. DOI： 10.13890/j.issn.1000-128x.2021.05.006.

Maosen TANG, Dong LIU, Jun SHEN, et al. Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET[J]. Electric Drive for Locomotives, 2021,(5):38-46. DOI： 10.13890/j.issn.1000-128x.2021.05.006.

摘要

针对超结场效应晶体管(SJ-MOSFET)，利用工艺仿真建立多次外延离子注入和深槽刻蚀2种不同P柱形貌的器件结构，对比研究了不同工艺、不同栅极结构SJ-MOS的静态特性差异，并与实测数据对比，验证建立模型的正确性。从空间电荷区不均匀拓展的角度，分析不同工艺路线器件的,C,-,V,特性测试中“电容转折”现象的微观机理。研究了感性负载下SJ-MOSFET开关过程中栅极电压、漏极电流、漏源极电压随时间变化关系，并搭建寄生体二极管反向恢复测试平台，探究了不同工艺对于反向恢复电荷、峰值电流等参数的影响。研究内容可指导器件设计，提高功率半导体器件在机车应用场景中的匹配度。

Abstract

For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studied, and compared with the measured data to verify the correctness of the model.From the perspective of uneven expansion of space charge region, the micro mechanism of "capacitance turning" phenomenon in ,C,-,V, characteristic test of devices with different process routes was analyzed. Then, the variation of gate voltage, drain current and drain source voltage with time in the switching process of SJ-MOS under inductive load was studied. Finally, a parasitic diode reverse recovery test platform was built to explore the effects of different processes on parameters such as reverse recovery charge and peak current. The research content of this paper could guide the device design to a certain extent and improve the matching degree of power semiconductor devices in locomotive application scenarios.

关键词

超结场效应晶体管C-V特性体二极管双脉冲测试反向恢复特性测试

Keywords

super junction MOSFETC-V characteristicbody diodedouble pulse testreverse recovery test

references

胡涛, 李泽宏, 张波. 900V超结VDMOS的设计[J]. 微电子学, 2011, 41(2): 289-292.

HU Tao, LI Zehong, ZHANG Bo. Design of a 900 V super junction VDMOS[J]. Microelectronics, 2011, 41(2): 289-292.

HU Chenming. Optimum doping profile for minimum ohmic resistance and high-breakdown voltage[J]. IEEE Transactions on Electron Devices, 1979, 26(3): 243-244. DOI: 10.1109/T-ED.1979.19416http://doi.org/10.1109/T-ED.1979.19416.

杨永念. 一种900 V超结VDMOSFET器件的设计与仿真[J]. 电子与封装, 2015(3): 29-34.

YANG Yongnian. Design and simulate of high voltage S-J VDMOSFET[J]. Electronics and Packaging, 2015(3): 29-34.

张波, 章文通, 蒲松, 等. 超结功率半导体器件[J]. 微纳电子与智能制造, 2019(1): 5-19.

ZHANG Bo, ZHANG Wentong, PU Song, et al. Superjunction power semiconductor devices[J]. Micro/nano Electronics and Intelligent Manufacturing, 2019(1): 5-19.

TAKAHASHI K, KURIBAYASHI H, KAWASHIMA T, et al. 20 mΩ cm2 660 V super junction MOSFETs fabricated by deep trench etching and epitaxial growth[C]//IEEE. 2006 IEEE International Symposium on Power Semiconductor Devices and IC's. Naples: IEEE, 2006. DOI: 10.1109/ISPSD.2006.1666130http://doi.org/10.1109/ISPSD.2006.1666130.

ZHANG Meng, WEI Jin, ZHOU Xianda, et al. Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance[J]. IEEE Electron Device Letters, 2019, 40(1): 79-82. DOI: 10.1109/LED.2018.2881234http://doi.org/10.1109/LED.2018.2881234.

PARISI Carmelo, MELITO Maurizio, FUSILLO Filadelfo, et al. MDmesh™ DM6: the latest super-junction MOSFET technology with improved fast recovery diode[C]//IEEE. PCIM Europe 2019. Nuremberg: VDE, 2019.

JAHDI Saeed, ALATISE Olayiwola, BONYADI Roozbeh, et al. An analysis of the switching performance and robustness of power MOSFETs body diodes: a technology evaluation[J]. IEEE Transactions on Power Electronics, 2015, 30(5): 2383-2394. DOI: 10.1109/TPEL.2014.2338792http://doi.org/10.1109/TPEL.2014.2338792.

NCEPOWER. NCE60R900K datasheet[EB/OL]. [2021-08-05]. http://www.ncepower.com/proshow.aspx?cateid=71&productsid=351http://www.ncepower.com/proshow.aspx?cateid=71&productsid=351.

张波, 罗小蓉, 李肇基. 功率半导体器件电场优化技术[M]. 成都: 电子科技大学出版社, 2015: 15-39.

ZHANG Bo, LUO Xiaorong, LI Zhaoji. Electric field optimization technology for power semiconductor devices[M]. Chengdu: University of Electronic Science and Technology of China Press, 2015: 15-39.

唐新灵, 崔翔, 张朋, 等. 感性负载条件下IGBT开通过程分析[J]. 华北电力大学学报(自然科学版), 2017, 44(2): 33-41.

TANG Xinling, CUI Xiang, ZHANG Peng, et al. Analysis on IGBT turn-on transient under inductive load[J]. Journal of North China Electric Power University, 2017, 44(2): 33-41.

浏览量

下载量

CSCD

CNKI被引量

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于沟道状态的SiC MOSFET器件浪涌能力研究

1 200 V SiC MOSFET器件的体二极管抗浪涌能力研究