Study on Calculation Method of Transient Temperature of IGBT in Metro Vehicles

Wenjie ZENG; Hua LI; Guanqiang HE; Shengpan MA; Weiwei WAN; Kai HE

doi:10.13890/j.issn.1000-128x.2021.06.020

您当前的位置：

首页 >

文章列表页 >

Study on Calculation Method of Transient Temperature of IGBT in Metro Vehicles

High-power Devices | 更新时间：2022-01-18

- Study on Calculation Method of Transient Temperature of IGBT in Metro Vehicles
- Electric Drive for Locomotives Vol. 0, Issue 6, Pages: 140-146(2021)
- 作者机构：
  
  1.株洲中车时代电气股份有限公司，湖南　株洲　412001
  2.中车青岛四方机车车辆股份有限公司，山东　青岛　266111
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.06.020
  CLC：
扫描看全文
Wenjie ZENG, Hua LI, Guanqiang HE, et al. Study on Calculation Method of Transient Temperature of IGBT in Metro Vehicles. [J]. Electric Drive for Locomotives 0(6):140-146(2021)
DOI：

Wenjie ZENG, Hua LI, Guanqiang HE, et al. Study on Calculation Method of Transient Temperature of IGBT in Metro Vehicles. [J]. Electric Drive for Locomotives 0(6):140-146(2021) DOI： 10.13890/j.issn.1000-128x.2021.06.020.

摘要

基于IGBT模块封装的物理结构，分析了热量冲击导致芯片失效的主要原理。根据芯片热损耗的主要传递路径，建立了热量传递各环节的瞬态传热模型，并分别给出了瞬态温升计算方法。尤其对热量传递模型较复杂的走行风冷热管式散热器进行了详细分析和试验研究，并给出了获取散热器热阻抗模型实时参数的有效解决方法；最后，对芯片瞬态结温计算方法进行了总结，并开发了软件工具。文章介绍的计算方法和软件工具可推广应用，为IGBT模块瞬态结温计算提供重要参考。

Abstract

The physical structure of IGBT module package was introduced, and the main mechanism of chip failure caused by heat shock was analyzed. The main transfer path of chip heat loss was analyzed, the transient heat-transfer model of each link of heat transfer was established, and the calculation method of transient temperature rise of each link was given respectively. The heat transfer model of heat pipe radiator cooled by the moving vehicle wind was complex, so the detailed analysis and experimental study were carried out particularly.An effective method to obtain the real-time parameters of the radiator thermal impedance model was found. Finally, the calculation method of transient junction temperature was summarized and the software tool was developed. The calculation method and software tools introduced can be widely applied and provide important reference for transient chip temperature calculation of IGBT module.

关键词

IGBT二极管热损耗热阻抗结温地铁车辆

Keywords

IGBTdiodeheat lossthermal impedancejunction temperaturemetro vehicles

references

RAHIMO M, KLAKA S. High voltage semiconductor technologies[C]//IEEE. 2009 13th European Conference on Power Electronics and Applications. Barcelona, Spain: IEEE, 2009: 1-10.

杨闳盛, 宋郭蒙, 王雄. IGBT模块与散热器接触界面气隙对散热的影响研究[J]. 机车电传动, 2020(1): 18-21.

YANG Hongsheng, SONG Guomeng, WANG Xiong. Research on effect of air gap between IGBT module and heatsink on thermal performance[J]. Electric Drive for Locomotives, 2020(1): 18-21.

丁杰, 唐玉兔, 忻力, 等. IGBT模块封装的热性能分析[J]. 机车电传动, 2013(2): 9-12.

DING Jie, TANG Yutu, XIN Li, et al. Thermal performance analysis of IGBT module packaging[J]. Electric Drive for Locomotives, 2013(2): 9-12.

BAZZI A M, KREIN P T, KIMBALL J W, et al. IGBT and diode loss estimation under hysteresis switching[J]. IEEE Transactions on Power Electronics, 2012, 27(3): 1044-1048.

QIAN J R, KHAN A, BATARSEH I. Turn-off switching loss model and analysis of IGBT under different switching operation modes[C]//IEEE. Proceedings of IECON '95-21st Annual Conference on IEEE Industrial Electronics. Orlando, FL, USA: IEEE, 1995: 240-245.

杨洪波, 王征宇, 黄宜山. IGBT损耗和结温计算研究[J]. 大功率变流技术, 2016(1): 30-33.

YANG Hongbo, WANG Zhengyu, HUANG Yishan. Study of calculation for IGBT loss and junction temperature[J]. High Power Converter Technology, 2016(1): 30-33.

魏巍. MATLAB应用数学工具箱技术手册[M]. 北京: 国防工业出版社, 2004.

WEI Wei. Technical manual of MATLAB applied mathematics toolbox[M]. Beijing: National Defense University Press, 2004.

王正林, 龚纯, 何倩. 精通MATLAB科学计算[M]. 2版. 北京: 电子工业出版社, 2009.

WANG Zhenglin, GONG Chun, HE Qian. Proficient in MATLAB scientific computing[M]. 2nd ed. Beijing: Publishing House of Electronics Industry, 2009.

杨世铭, 陶文铨. 传热学[J]. 4版. 北京: 高等教育出版社, 2006.

YANG Shiming, TAO Wenquan. Heat transfer[J]. 4th ed. Beijing: Higher Education Press, 2006.

HU X, LIN S H, STANTON S, et al. A foster network thermal model for HEV/EV battery modeling[J]. IEEE Transactions on Industry Applications, 2011, 47(4): 1692-1699.

Views

下载量

CSCD

CNKI被引量

Alert me when the article has been cited

提交

Tools

Publicity Resources

Recent research progress of SiC superjunction devices

Research of IGBT failure energy transmission and energy shock

Comparative study on effect of voids in thermal interface material layer on chip junction temperature of IGBT modules with and without baseplate

Intelligent integrated power device with high power density and research on its parallel application

Flexibility coefficient calculation of rubber tyred metro and its applicability analysis

Related Author

No data

Related Institution

National Key Laboratory of Electronics Thin Film and Integrated Devices, University of Electronic Science and Technology

Zhuzhou CRRC Times Semiconductor Co., Ltd.

State Key Laboratory of Power Semiconductor and Integration Technology

School of Electrical Engineering, Southwest Jiaotong University

CRRC Zhuzhou Institute Co., Ltd.

⁰