Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET

Maosen TANG; Dong LIU; Jun SHEN; Xinlai GE; Rongbin ZHOU; Junhan YE

doi:10.13890/j.issn.1000-128x.2021.05.006

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Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET

Chip Design and Manufacturing | 更新时间：2021-12-13

- Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET
- Electric Drive for Locomotives Issue 5, Pages: 38-46(2021)
- 作者机构：
  
  1.西南交通大学　电气工程学院，四川　成都　611756
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- 基金信息：
- DOI：10.13890/j.issn.1000-128x.2021.05.006
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Maosen TANG, Dong LIU, Jun SHEN, et al. Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET. [J]. Electric Drive for Locomotives (5):38-46(2021)
DOI：

Maosen TANG, Dong LIU, Jun SHEN, et al. Simulation Study on Switching Process and Reverse Recovery Performance of Low Miller Capacitance Super Junction MOSFET. [J]. Electric Drive for Locomotives (5):38-46(2021) DOI： 10.13890/j.issn.1000-128x.2021.05.006.

摘要

针对超结场效应晶体管(SJ-MOSFET)，利用工艺仿真建立多次外延离子注入和深槽刻蚀2种不同P柱形貌的器件结构，对比研究了不同工艺、不同栅极结构SJ-MOS的静态特性差异，并与实测数据对比，验证建立模型的正确性。从空间电荷区不均匀拓展的角度，分析不同工艺路线器件的,C,-,V,特性测试中“电容转折”现象的微观机理。研究了感性负载下SJ-MOSFET开关过程中栅极电压、漏极电流、漏源极电压随时间变化关系，并搭建寄生体二极管反向恢复测试平台，探究了不同工艺对于反向恢复电荷、峰值电流等参数的影响。研究内容可指导器件设计，提高功率半导体器件在机车应用场景中的匹配度。

Abstract

For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established. The static characteristics of SJ-MOS with different processes and gate structures were compared and studied, and compared with the measured data to verify the correctness of the model.From the perspective of uneven expansion of space charge region, the micro mechanism of "capacitance turning" phenomenon in ,C,-,V, characteristic test of devices with different process routes was analyzed. Then, the variation of gate voltage, drain current and drain source voltage with time in the switching process of SJ-MOS under inductive load was studied. Finally, a parasitic diode reverse recovery test platform was built to explore the effects of different processes on parameters such as reverse recovery charge and peak current. The research content of this paper could guide the device design to a certain extent and improve the matching degree of power semiconductor devices in locomotive application scenarios.

关键词

超结场效应晶体管C-V特性体二极管双脉冲测试反向恢复特性测试

Keywords

super junction MOSFETC-V characteristicbody diodedouble pulse testreverse recovery test

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