Research on crosstalk problem of SiC MOSFET module and countermeasures in application

LIU Min'an; LUO Haihui; LU Shengwen; WANG Xu; LI Cheng

doi:10.13890/j.issn.1000-128X.2023.02.003

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Research on crosstalk problem of SiC MOSFET module and countermeasures in application

High-power Devices | 更新时间：2024-08-02

- Research on crosstalk problem of SiC MOSFET module and countermeasures in application
- Electric Drive for Locomotives Issue 2, Pages: 36-42(2023)
- 作者机构：
  
  1.株洲中车时代半导体有限公司，湖南株洲　　412001
  2.功率半导体与集成技术全国重点实验室，湖南株洲;412001
- 作者简介：
- 基金信息：
- DOI：10.13890/j.issn.1000-128X.2023.02.003
  CLC： TN386.1
- Published：10 March 2023，
  
  Received：16 October 2022，
  
  Revised：16 February 2023，
- 稿件说明：
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刘敏安, 罗海辉, 卢圣文, 等. SiC MOSFET模块串扰问题及应用对策研究[J]. 机车电传动, 2023(2): 36-42.

LIU Min'an, LUO Haihui, LU Shengwen, et al. Research on crosstalk problem of SiC MOSFET module and countermeasures in application[J]. Electric Drive for Locomotives,2023(2): 36-42.
刘敏安, 罗海辉, 卢圣文, 等. SiC MOSFET模块串扰问题及应用对策研究[J]. 机车电传动, 2023(2): 36-42. DOI： 10.13890/j.issn.1000-128X.2023.02.003.

LIU Min'an, LUO Haihui, LU Shengwen, et al. Research on crosstalk problem of SiC MOSFET module and countermeasures in application[J]. Electric Drive for Locomotives,2023(2): 36-42. DOI： 10.13890/j.issn.1000-128X.2023.02.003.

摘要

针对SiC MOSFET模块应用过程中出现的串扰问题，文章首先对3种测量差分探头的参数和测量波形进行对比，有效减小测量误差；然后详细分析串扰引起模块栅源极出现电压正向抬升和负向峰值过大的原因，并提出3种有效应用对策：减小栅极阻抗、采用有源米勒箝位和三级关断串扰抑制电路。其中，减小栅极阻抗可减小感应压降，抑制栅源极过压；有源米勒箝位技术使栅源极电压串扰波形幅值限制在箝位电压范围；利用三级关断串扰抑制电路技术，显著抑制了栅源极电压的正向抬升和负向峰值，最后通过试验仿真验证了3种方法的有效性。

Abstract

In view of the crosstalk problem in the application of SiC MOSFET module

this paper first conducted a comparison of the parameters and measured waveform of three types of measuring differential probes to effectively reduce measurement error. Then

the reasons why crosstalk causes excessive forward voltage and excessive negative voltage at the gate and source were analyzed in detail

and three effective countermeasures in application were provided

including reducing gate impedance

using active Miller clamping and three-level turn-off crosstalk suppression circuit. Reducing the gate impedance could suppress the amplitude of gate voltage and reduce induced voltage drop. By using active Miller clamping technology

the amplitude of the gate source voltage crosstalk waveform was limited to the clamping voltage range. By utilizing three-level turn-off crosstalk suppression circuit technology

the forward uplift and negative peak of gate source voltage was suppressed significantly. The effectiveness of the three methods was proved by experiment and simulation.

关键词

串扰问题栅源极电压栅极阻抗有源米勒箝位三级关断电平驱动技术

Keywords

crosstalk problemvoltage at the gate and sourcegate impedanceactive Miller clampingthree-stage off level driving technology

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