[1]田 伟,谢舜蒙,陈燕平,等.轨道交通混合SiC IGBT器件与Si IGBT器件应用对比研究[J].机车电传动,2020,(05):67-72.[doi:10.13890/j.issn.1000-128x.2020.05.015]
　TIAN Wei,XIE Sunmeng,CHEN Yanping,et al.Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBTDevice in Rail Transit[J].Electric Drive for Locomotives,2020,(05):67-72.[doi:10.13890/j.issn.1000-128x.2020.05.015]
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轨道交通混合SiC IGBT器件与Si IGBT器件应用对比研究()
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机车电传动[ISSN:1000-128X/CN:43-1125/U]

卷:
期数:
2020年05期
页码:
67-72
栏目:
SiC技术
出版日期:
2020-09-10

文章信息/Info

Title:
Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBTDevice in Rail Transit
文章编号:
1000-128X(2020)05-0067-06
作者:
田 伟; 谢舜蒙; 陈燕平; 张 荣; 朱 武; 刘 杰; 谭一帆
（中车株洲所电气技术与材料工程研究院， 湖南 株洲 412001）
Author(s):
TIAN Wei;  XIE Sunmeng;  CHEN Yanping;  ZHANG Rong;  ZHU Wu;  LIU Jie;  TAN Yifan
( CRRC ZIC Research Institute of Electrical Technology & Material Engineering, Zhuzhou, Hunan 412001,China )
关键词:
轨道交通; 混合SiC IGBT; Si IGBT; 杂散电感; 损耗; 仿真
Keywords:
rail transit;  hybrid SiC IGBT;  Si IGBT;  stray inductance;  loss;  simulation
分类号:
TN304.2+4
DOI:
10.13890/j.issn.1000-128x.2020.05.015
文献标志码:
A
摘要:
混合SiC IGBT采用SiC肖特基二极管替换传统IGBT器件中的反并联二极管，可以减少二极管反向恢复损耗和IGBT开通损耗，相对于传统的Si IGBT器件，其性能大幅提升，相比于高压大功率全SiC器件，混合SiC IGBT在成本和技术成熟度方面具有较大优势。文章根据混合SiC IGBT器件特性开发了符合混合SiC IGBT器件应用需求的低换流回路杂散电感的变流器模块，研究了换流回路杂散电感对混合SiC IGBT开关特性的影响。试验结果表明：变流模块杂散电感对混合SiC IGBT开通振荡电压幅值与持续时间
Abstract:
Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss. Compared with the traditional Si IGBT device, the performance of hybrid SiC IGBT is greatly improved, and compared with high-voltage and high-power all SiC devices, hybrid SiC IGBT has greater advantages in cost and technology maturity. According to the characteristics of hybrid SiC IGBT devices, a converter module with low stray inductance in converter circuit was developed to meet the application requirements of hybrid SiC IGBT devices, and the influence of stray inductance of converter circuit on switching characteristics of hybrid SiC IGBT was studied. The experimental results showed that the stray inductance of converter module had a great influence on the amplitude and duration of switching on oscillation voltage of hybrid SiC IGBT, and the system loss could be reduced by about 25% by using hybrid SiC IGBT devices.

参考文献/References:

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备注/Memo

备注/Memo:
作者简介：田 伟（1988—），男，硕士，现从事大功率IGBT器件应用研究。
更新日期/Last Update: 2020-09-10